NTE492

NTE492 MOSFET N−Ch, Enhancement Mode High Speed Switch TO92 Type Package Absolute Maximum Ratings: Drain−Source Voltage, VDS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 200V Gate−Source Voltage, VGS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20V Drain Current, ID Continuous (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 250mA Pulsed (Note 2) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 500mA Total Device Dissipation (TA = +25C), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 350mW Derate above 25C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2.8mW/C Operating Junction Temperature Range, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −55 to +150C Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −55 to +150C Note 1. The Power Dissipation of the package may result in a lower continuous drain current. Note 2. Pulse Width  300s, Duty Cycle  2%. Electrical Characteristics: (TA = +25C unless otherwise specified) Parameter Symbol Test Conditions Min Typ Max Unit OFF Characteristics Zero−Gate−Voltage Drain Current Drain−Source Breakdown Voltage Gate Reverse Current IDSS VDS = 130V, VGS = 0 V(BR)DSX VGS = 0, ID = 100A IGSS VGS = 15V, VDS = 0 − − 30 nA 200 − − V − 0.01 10.0 nA ON Characteristics (Note 2) Gate Threshold Voltage VGS(Th) ID = 1mA, VDS = VGS 1.0 − 3.0 V Static Drain−Source ON Resistance rDS(on) VGS = 10V, ID = 100mA − 4.5 6.0  VGS = 10V, ID = 250mA − 4.8 6.4  Small−Signal Characteristics Input Capacitance Ciss VDS = 25V, VGS = 0, f = 1MHz − 60 − pF Reverse Transfer Capacitance Crss VDS = 25V, VGS = 0, f = 1MHz − 6.0 − pF Output Capacitance Coss VDS = 25V, VGS = 0, f = 1MHz − 30 − pF 200 400 − mmhos Forward Transconductance gfs VDS = 25V, ID = 250mA Note 2. Pulse Width  300s, Duty Cycle  2%. Rev. 2−21 Electrical Characteristics (Cont’d): (TA = +25C unless otherwise specified) Parameter Symbol Test Conditions Min Typ Max Unit Switching Characteristics Turn−On Time ton − 6.0 15.0 ns Turn−Off Time toff − 12 ns 15 D G S .135 (3.45) Min .210 (5.33) Max Seating Plane .315 (8.0) Min .021 (0.45) Dia Max DGS .100 (2.54) .050 (1.27) .156 (4.2) Max .105 (2.67) Max .205 (5.2) Max .105 (2.67) Max