NTE51

NTE51 Silicon NPN Transistor High Voltage, High Speed Switch Description: The NTE51 is a silicon NPN transistor in a TO220 type package designed for high–voltage, high– speed power switching inductive circuits where fall time is critical. This device is particularly suited for 115V and 220V SWITCHMODE applications such as switching regulators, Inverters, motor controls, solenoid/relay drivers and deflection circuits. Features: D Reverse Bias SOA with Inductive Loads @ TC = +100°C D 700V Blocking Capability Absolute Maximum Ratings: Collector–Emitter Voltage, VCEO(sus) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 400V Collector–Emitter Voltage, VCEV . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 700V Emitter Base Voltage, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9V Collector Current,IC Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4A Peak (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8A Base Current, IB Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2A Peak (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4A Emitter Current, IE Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6A Peak (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12A Total Power Dissipation (TA = +25°C), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2W Derate above 25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16mW/°C Total Power Dissipation (TC = +25°C), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 75W Derate above 25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 600mW/°C Operating Junction Temperature Range, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –65° to +150°C Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –65° to +150°C Thermal Resistance, Junction–to–Case, RthJC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.67°C/W Thermal Resistance, Junction–to–Ambient, RthJA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 62.5°C/W Lead Temperature (During Soldering, 1/8” from case, 5sec), TL . . . . . . . . . . . . . . . . . . . . . . . +275°C Electrical Characteristics: (TC = +25°C unless otherwise Specified) Parameter Symbol Test Conditions Min Typ Max Unit 400 – – V VCEV = 700V, VBE(off) = 1.5V – – 1 mA VCEV = 700V, VBE(off) = 1.5V, TC = +100°C – – 1 mA VEB = 9V, Ic = 0 – – 1 mA OFF Characteristics (Note 1) Collector–Emitter Sustaining Voltage Collector Cutoff Current Emitter Cutoff Current VCEO(sus) Ic = 10mA, IB = 0 ICEV IEBO Note 1. Pulse test: Pulse Width = 300µs, Duty Cycle = 2%. Electrical Characteristics (Cont’d): (TC = +25°C unless otherwise Specified) Parameter Symbol Test Conditions Min Typ Max Unit VCE = 5V, IC = 1A 10 – VCE = 5V, IC = 2A 8 – 40 IC = 1A, IB = 0.2A – – 0.5 V IC = 2A, IB = 0.5A – – 0.6 V IC = 2A, IB = 0.5A, TC = +100°C – – 1.0 V IC = 4A, IB = 1A – – 1.0 V VCE = 10V, IC = 500mA, f = 1MHz 4 – – MHz VCB = 10V, IE = 0, f = 0.1MHz – 65 – pF VCC = 125V, IC = 2A, IB1 = IB2 = 0.4A, tp = 25µs, µ Duty Cycle ≤ 1% – 0.025 0.1 µs – 0.3 0.7 µs ON Characteristics (Note 1) DC Current Gain hFE Collector–Emitter Saturation Voltage VCE(sat) 60 Dynamics Characteristics Current Gain–Bandwidth Product Output Capacitance fT Cob Switching Characteristics (Resistive Load) Delay Time td Rise Time tr Storage Time ts – 1.7 4.0 µs Fall Time tf – 0.4 0.9 µs – 0.9 4.0 µs – 0.32 0.9 µs – 0.16 – µs Switching Characteristics (Inductive Load, Clamped) Voltage Storage Time tsv Crossover Time tc Fall Time tfi Vclamp = 300V, IB1 = 0.4A, VBE(off) = 5V Note 1. Pulse test: Pulse Width = 300µs, Duty Cycle = 2%. .420 (10.67) Max .110 (2.79) .500 (12.7) Max .147 (3.75) Dia Max .250 (6.35) Max .500 (12.7) Min .070 (1.78) Max Base .100 (2.54) Emitter Collector/Tab