NTE5360

NTE5360 Silicon Controlled Rectifier (SCR) 35 Amp Absolute Maximum Ratings and Electrical Characteristics: Repetitive Peak Off State Voltage (Gate Open, TJ = +110°C), VDRM . . . . . . . . . . . . . . . . . . . . . 600V Repetitive Peak Reverse Voltage (Gate Open, TJ = +110°C), VRRM . . . . . . . . . . . . . . . . . . . . . . 600V RMS On−State Current (TC = +80°C, 360° Conduction Angle), IT(RMS) . . . . . . . . . . . . . . . . . . . . 40A Peak Surge (Non−Repetitive) On−State Current (One Cycle, 50 or 60Hz), ITSM . . . . . . . . . . . 400A Peak Gate Trigger Current (3µs Max), IGTM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2A Peak Gate Power (IGT ≤ IGTM), PGM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20W Average Gate Power Dissipation, PG(AV) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 500mW Maximum Repetitive Peak Off−State Current (At VDRM, TC = +110°C), IDRM . . . . . . . . . . . . . . 1.0mA Maximum Repetitive Peak Reverse Current (At VRRM, TC = +110°C), IRRM . . . . . . . . . . . . . . . 1.0mA Maximum Peak On−State Voltage (TC = +25°C, IT = 40A), VTM . . . . . . . . . . . . . . . . . . . . . . . . . 1.6V Maximum DC Holding Current (Gate Open, TC = +25°C), IH . . . . . . . . . . . . . . . . . . . . . . . . . . . 50mA Critical Rate of Rise of Off−State Voltage (Gate Open, TC = +110°C), dv/dt . . . . . . . . . . . . 200V/µs Maximum DC Gate Trigger Current (VA = 12V, RL = 60Ω, TC = +25°C), IGT . . . . . . . . . . . . . . 25mA Maximum DC Gate Trigger Voltage (VA = 12V, RL = 60Ω, TC = +25°C), VGT . . . . . . . . . . . . . . . 2.0V gate Controlled Turn−On Time (For td and tr, IGT = 150mA, TC = +25°C), tgt . . . . . . . . . . . . . . 2.5µs Operating Temperature Range, Topr . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −40° to +150°C Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −40° to +150°C Typical Thermal Resistance, Junction−to−Case, RthJC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.4°C/W .562 (14.28) Max Gate Cathode 1.193 (30.33) Max .200 (5.08) Max .453 (11.5) Max Anode 1/4−28 UNF−2A