0
登录后你可以
  • 下载海量资料
  • 学习在线课程
  • 观看技术视频
  • 写文章/发帖/加入社区
会员中心
创作中心
发布
  • 发文章

  • 发资料

  • 发帖

  • 提问

  • 发视频

创作活动
NTE5380

NTE5380

  • 厂商:

    NTE

  • 封装:

    TO-200AB

  • 描述:

    SCR-600V 400A HI SPD

  • 数据手册
  • 价格&库存
NTE5380 数据手册
NTE5380 Silicon Controlled Rectifier (SCR) for High Speed Switching, 600V, 400 Amp, TO200AB Absolute Maximum Ratings: Maximum Repetitive Peak Voltage, VDRM, VRRM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 800V Maximum Non−Repetitive Peak Voltage, VRSM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 900V Repetitive Peak Off−State Current (TJ = +125°C), IDRM, IRRM . . . . . . . . . . . . . . . . . . . . . . . . . . 40mA Maximum Operating Temperature Range, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −40° to +125°C Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −40° to +150°C Maximum Thermal Resistance, Junction−to−Heatsink, RthJHS DC Operation Single Side Cooled . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.17K/W DC Operation Double Side Cooled . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.08K/W Maximum Thermal Resistance, Case−to−Heatsink, RthCHS DC Operation Single Side Cooled . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.033K/W DC Operation Double Side Cooled . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.017K/W Mounting Torque (±10%), F . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4900N (500Kg) Electrical Characteristics: Parameter Symbol Test Conditions Rating Unit Single Side Cooled, +85°C 130 A Double Side Cooled, +55°C 370 A DC @ +25°C Heatsink Temperature, Double Side Cooled 690 A t = 10ms 4900 A 5130 A 4120 A 4310 A 120 KA2s 110 KA2s 85 KA2s 78 KA2s 1.8 V On−State Conduction Max. Average On−State Current at Heatsink Temperature IT(AV) Max. RMS On−State Current IT(RMS) Max. Peak, One Half Cycle, Non−Repetitive Surge Current ITSM 180° Conduction, Half Sine Wave t = 8.3ms t = 10ms t = 8.3ms Max. I2t for Fusing I2t t = 10ms t = 8.3ms t = 10ms t = 8.3ms Max. Peak On−State Voltage VTM No Voltage Reapplied Sinusoidal Half Wave, Initial TJ = +125°C 100% VRRM Reapplied No Voltage Reapplied Sinusoidal Half Wave, Initial TJ = +125°C 100% VRRM Reapplied ITM = 600V, TJ = +125°C, tp = 10ms Sine Wave Pulse Threshold Voltage, Low Level VT(TO)1 (16.7% x π x IT(AV) < I < π x IT(AV)), TJ = +125°C 1.40 V Threshold Voltage, High Level VT(TO)2 (I > π x IT(AV)), TJ = +125°C 1.45 V Electrical Characteristics (Cont’d): Parameter Symbol Test Conditions Rating Unit On−State Conduction (Cont’d) Forward Slope Resistance, Low Level rt1 (16.7% x π x IT(AV) < I < π x IT(AV)), TJ = +125°C 0.67 mΩ Forward Slope Resistance, High Level rt2 (I > π x IT(AV)), TJ = +125°C 0.58 mΩ Maximum Holding Current IH TJ = +25°C, IT > 30A 600 mA Typical Latching Current IL TJ = +25°C, VA = 12V, Ra = 6Ω, IG = 1A 1000 mA TJ = +125°C, VDRM = 600V, ITM = 2 x di/dt 1000 A/μs 1.1 μs 10 − 20 μs Switching Max. Non−Repetitive Rate of Rise of Turned−On Current di/dt Typical Delay Time td TJ = +125°C, VDRM = 600V, ITM = 50A DC, tp = 1μs, Resistive Load, gate Pulse: 10V, 5Ω Source Max. Turn−Off Time tp TJ = +125°C, ITM = 30A, Commutating di/dt = 20A/μs, VR = 50V, tp = 500μs, dv/dt = 500V/μs Blocking Maximum Critical Rate of Rise of Off−State Voltage dv/dt TJ = +125°C, Linear to 80% VDRM 500 V/μs Max. Peak Reverse and Off−State Leakage Current IRRM, IDRM TJ = +125°C, VDRM/VRRM Applied 40 mA Maximum Peak Gate Power Maximum Average Gate Power PGM PG(AV) TJ = +125°C, f = 50Hz, d% = 50 60 W 10 W Max. Peak Positive Gate Current IGM TJ = +125°C, tp ≤ 5ms 10 A Max. Peak Positive Gate Voltage +VGM TJ = +125°C, tp ≤ 5ms 20 V Max. Peak Negative Gate Voltage −VGM 5 V Max. DC Gate Current Required to Trigger IGT TJ = +25°C, VA = 12V, Ra = 6Ω 150 mA Max. DC Gate Voltage Required to Trigger VGT TJ = +25°C, VA = 12V, Ra = 6Ω 3 V Max. DC Gate Current not to Trigger IGD TJ = +125°C, Rated VDRM Applied 20 mA Max. DC Gate Voltage not to Trigger VGD TJ = +125°C, Rated VDRM Applied 0.25 V Triggering .145 (3.7) Dia Max 8.500 (21.59) Max 1.650 (41.91) Max .030 (.762) Min .560 (14.22) .030 (.762) Min For No. 6 Screws .755 (19.18) Max 1.650 (41.91) Max Cathode Cathode Potential (Red) Gate (White) Marking Anode
NTE5380 价格&库存

很抱歉,暂时无法提供与“NTE5380”相匹配的价格&库存,您可以联系我们找货

免费人工找货