NTE5408

NTE5408 thru NTE5410 Silicon Controlled Rectifier (SCR) 3 Amp Sensitive Gate, TO5 Description: The NTE5408 through NTE5410 sensitive gate SCRs are designed to be driven directly with IC and MOS devices. These SCRs feature proprietary, void−free glass−passivated chips and are hermetically sealed in TO5 type packages. These 4A devices are available in voltages up to 600V and with a gate current of 200μA. These NTE SCRs are reverse−blocking triode thyristors and may be switched from off−state to conduction by a current pulse applied to the gate terminal. The NTE5408 through NTE5410 are designed for control applications in lighting, heating, cooling, and static switching relays. Absolute Maximum Ratings: Repetitive Peak Reverse Voltage (TC = +100°C), VRRM NTE5408 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 200V NTE5409 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 400V NTE5410 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 600V Repetitive Peak Off−State Voltage (TC = +100°C), VDRXM NTE5408 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 200V NTE5409 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 400V NTE5410 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 600V RMS On−State Current (TC = +75°C, Conduction Angle of 180°), IT(RMS) . . . . . . . . . . . . . . . . . . . 4A Peak Surge (Non−Repetitive) On−State Current (One Cycle at 50 or 60Hz), ITSM . . . . . . . . . . . 40A Peak Gate−Trigger Current (3μs Max), IGTM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1A Peak Gate−Power Dissipation (IGT ≤ IGTM for 3μs Max), PGM . . . . . . . . . . . . . . . . . . . . . . . . . . . 20W Average Gate Power Dissipation, PG(AV) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 200mW Operating Temperature Range, Topr . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −40° to +100°C Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −40° to +150°C Typical Thermal Resistance, Junction−to−Case, RthJC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +5°C/W Electrical Characteristics: (TC = +25°C unless otherwise specified) Parameter Symbol IRRM Peak Off−State Current IDRXM Maximum On−State Voltage VTM DC Holding Current IHOLD Test Conditions Min Typ Max Unit VRRM = Max, VDRXM = Max, TC = +100°C, RGK = 1kΩ − − 0.75 mA − − 0.75 mA IT = 10A (Peak) − − 2.2 V RGK = 1000Ω − − 5 mA DC Gate−Trigger Current IGT VD = 6VDC, RL = 100Ω − − 200 μA DC Gate−Trigger Voltage VGT VD = 6VDC, RL = 100Ω − − 0.8 V Gate Controlled Turn−On Time tgt IG x 3GT − 1.2 − μs I2t for Fusing Reference I2t For SCR Protection − − 2.6 A2sec − 5 − V/μs Critical Rate of Applied Forward Voltage dv/dt RGK = 1kΩ, TC = +100°C (critical) .352 (8.95) Dia Max .325 (8.13) Dia Max .250 (6.35) Max .500 (12.7) Min .019 (0.5) Gate Cathode Anode 45° .031 (.793)