0
登录后你可以
  • 下载海量资料
  • 学习在线课程
  • 观看技术视频
  • 写文章/发帖/加入社区
会员中心
创作中心
发布
  • 发文章

  • 发资料

  • 发帖

  • 提问

  • 发视频

创作活动
NTE5413

NTE5413

  • 厂商:

    NTE

  • 封装:

    TO225AA

  • 描述:

    SCR 100V 4A TO126

  • 数据手册
  • 价格&库存
NTE5413 数据手册
NTE5411 thru NTE5416 Silicon Controlled Rectifier (SCR) 4 Amp, Sensitive Gate, TO126 Description: The NTE5411 through NTE5416 are PNPN silicon controlled rectifier (SCR) devices designed for high volume consumer applications such as temperature, light, and speed control: process and remote control, and warning systems where reliability of operation is important. Features: D Passivated Surface for Reliability and Uniformity D Power Rated at Economical Prices D Practical Level Triggering and Holding Characteristics Absolute Maximum Ratings: (TC = +110°C unles otherwise specified) Repetitive Peak Forward and Reverse Blocking Voltage, VDRM, VRRM (1/2 Sine Wave, RGK = 1000Ω, TC = −40° to +110°C, Note 1) NTE5411 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30V NTE5412 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 60V NTE5413 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100V NTE5414 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 200V NTE5415 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 400V NTE5416 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 600V Non−Repetitive Peak Reverse Blocking Voltage , VRSM (1/2 Sine Wave, RGK = 1000Ω, TC = −40° to +110°C) NTE5411 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100V NTE5412 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100V NTE5413 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 150V NTE5414 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 250V NTE5415 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 450V NTE5416 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 650V Average On−State Current, IT(AV) TC = −40° to +110°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2.6A TC = +100°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.6A Surge On−State Current (TC = +90°C), ITSM 1/2 Sine wave, 60Hz . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25A 1/2 Sine wave, 1.5ms . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 35A Circuit Fusing (t = 8.3ms), I2t . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2.6A2s Peak Gate Power (Pulse Width = 10μs, TC = +90°C), PGM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.5W Note 1. Ratings apply for zero or negative gate voltage. Devices shall not have a positive bias applied to the gate concurrently with a negative potential on the anode. Devices should not be tested with a constant current source for forward or reverse blocking capability such that the voltage applied exceeds the rated blocking voltage. Absolute Maximum Ratings (Cont’d): (TC = +110°C unles otherwise specified) Average Gate Power (t = 8.2ms, TC = +90°C), PG(AV) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.1W Peak Forward Gate Current, IGM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.2A Peak Reverse Gate Voltage, VRGM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6V Operating Junction Temperature Range, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −40° to +110°C Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −40° to +150°C Thermal Resistance, Junction−to−Case, RthJC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3°C/W Thermal Resistance, Junction−to−Ambient, RthJA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 75°C/W Mounting Torque (Note 2) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 in. lb. Note 2. Torque rating applies with the use of a compression washer. Mounting torque in excess of 6 in. lb. does not appreciably lower case−to−sink thermal resistance. Anode lead and heatsink contact pad are common. Electrical Characteristics: (TC = +25°C, RGK = 1000Ω unles otherwise specified) Parameter Symbol Test Conditions Min Typ Max Unit Peak Forward or Reverse Blocking Current IDRM, IRRM Rated VDRM or VRRM, TC = +25°C − − 10 μA Rated VDRM or VRRM, TC = +110°C − − 200 μA Peak Forward “ON” Voltage VTM ITM = 8.2A Peak, Note 3 − − 2.2 V Gate Trigger Current (Continuous DC, Note 4) IGT VAK = 12V, RL = 24Ω − − 200 μA VAK = 12V, RL = 24Ω, TC = −40°C − − 500 μA Gate Trigger Voltage (Continuous DC) VGT Source Voltage = 12V, RS = 50Ω, VAK = 12V, RL = 24Ω, TC = −40°C − − 1 V Gate Non−Trigger Voltage VGD VAK = Rated VDRM, RL = 100Ω, TC = +110°C 0.2 − − V VAK = 12V, IGT = 2mA, TC = +25°C − − 5 mA Initiating On−State Current = 200mA, TC = −40°C − − 10 mA Source Voltage = 12V, RS = 6kΩ, ITM = 8.2A, IGT = 2mA, Rated VDRM, Rise Time = 20ns, Pulse Width = 10μs − 2 − μs VD = Rated VDRM, TC = +110°C − 10 − V/μs Holding Current Total Turn−On Time Forward Voltage Application Rate IH tgt dv/dt Note 3. Pulse Width = 1ms to 2ms, Duty Cycle = 2%. Note 4. Measurement does not include RGK current. .330 (8.38) Max .175 (4.45) Max .450 (11.4) Max .118 (3.0) Dia .655 (16.6) Max .030 (.762) Dia K A G .090 (2.28) .130 (3.3) Max
NTE5413 价格&库存

很抱歉,暂时无法提供与“NTE5413”相匹配的价格&库存,您可以联系我们找货

免费人工找货
NTE5413
  •  国内价格
  • 1+17.46392
  • 3+15.34382
  • 25+14.91261

库存:29