NTE5424

NTE5424 Silicon Controlled Rectifier (SCR) for TV Power Supply Switching, TO220 Description: The NTE5424 is a silicon controlled rectifier (SCR) in a TO220 type package designed for high−speed switching applications such as power inverters, switching regulators, and high−current pulse applications. This device features fast turn−off, high dv/dt, and high di/dt characteristics and may be used at frequencies up to 25kHz. Features: D Fast Turn−Off Time D High di/dt and dv/dt Capabilities D Shorted−Emitter Gate−Cathode Construction D Low Thermal Resistance D Center−Gate Construction Absolute Maximum Ratings: Repetitive Peak Off−State Voltage (Gate Open, Note 1), VDRM . . . . . . . . . . . . . . . . . . . . . . . . . . 400V Repetitive Peak Reverse Voltage (Gate Open, Note 1), VRRM . . . . . . . . . . . . . . . . . . . . . . . . . . . 400V RMS On−State Current (TC = +60°C, t1/t2 = 0.5), IT(RMS) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5.0A Average On−State Current (TC = +60°C, t1/t2 = 0.5), IT(AV) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3.2A Peak Surge (Non−Repetitive) On−State Current (One Cycle), ITSM 60Hz Sinusoidal . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 80A 50Hz Sinusoidal . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 75A Peak Forward Gate Power Dissipation (10μs max, Note 2), PGM . . . . . . . . . . . . . . . . . . . . . . . . 13W Peak Reverse Gate Power Dissipation (10μs max, Note 2), PRGM . . . . . . . . . . . . . . . . . . . . . . . 13W Average Gate Power Dissipation (10ms max, Note 2), PG(AV) . . . . . . . . . . . . . . . . . . . . . . . . 500mW Rate of Change of On−State Current VDM = 400V, IGT = 500mA, tr = 0.5μs), di/dt . . . . . . . 200A/μs Fusing Current (TC = +60°C, 8.3ms), I2t . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 26A2s Operating Case Temperature Range, TC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −40° to +100°C Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −40° to +150°C Lead Temperature (During Soldering, 10sec max), TL . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +225°C Thermal Resistance, Junction−to−Case, RthJC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2.2°C/W Note 1. These values do not apply if there is a positive gate signal. Gate must be open or negatively biased. Note 2. Any product of gate current and gate voltage which results in a gate power less than the maximum is permitted. Electrical Characteristics: (TC = +25°C, “Maximum Ratings” unless otherwise specified) Parameter Symbol Test Conditions Min Typ Max Unit Peak Forward Blocking Current IDRM VD = 400V, TC = +100°C − 0.5 3.0 mA Peak Reverse Blocking Current IRRM VR = 400V, TC = +100°C − 0.3 1.5 mA Forward ON Voltage VTM ITM = 30A − 2.34 4.0 V Gate Trigger Current, Continuous DC IGT Anode Voltage = 12V, RL = 30Ω − − 50 mA Gate Trigger Voltage, Continuous DC VGT Anode Voltage = 12V, RL = 30Ω − 1.2 2.5 V − 20 50 mA 100 250 − V/μs DC Holding Current IH Rate of Rise of Off−State Voltage dv/dt VD = 400V, TC = +80°C Turn−On Time tgt VD = 400V, IT = 8A (Peak), IGT = 300mA, tr = 0.1μs − 0.7 − μs Circuit Commutated Turn−Off Time tq VD = 400V, Pulse Duration = 50μs, dv/dt = 100V/μs, −di/dt = −10A/μs, IGT = 100mA at turn−on, IT = 4A, VGK = 0V at turn−off, TC = +75°C − 4.4 − μs .420 (10.67) Max .110 (2.79) .147 (3.75) Dia Max .500 (12.7) Max .250 (6.35) Max .070 (1.78) Max .500 (12.7) Min Cathode Gate .100 (2.54) Anode/Tab