NTE5426

NTE5426 Silicon Controlled Rectifier (SCR) Sensitive Gate, TO220 Isolated Description: The NTE5426 is silicon controlled rectifier (SCR) in an isolated tab TO220 type package. This device may be switched from off−state to conduction by a current pulse applied to the gate terminal and is designed for control applications in lighting, heating, cooling, and static switching relays. Absolute Maximum Ratings: Repetitive Peak Off−State Voltage (Gate Open, TC = +110°C), VDRM . . . . . . . . . . . . . . . . . . . . . 400V Repetitive Peak Reverse Voltage (Gate Open, TC = +110°C), VRRM . . . . . . . . . . . . . . . . . . . . . . 400V RMS On−State Current (TC = +80°C, 180° Conduction Angle), IT(RMS) . . . . . . . . . . . . . . . . . . . . 10A Peak Surge (Non−Repetitive) On−State Current (One Cycle, 50 or 60Hz), ITSM . . . . . . . . . . . . . 80A Peak Gate−Trigger Current (3μs max), IGTM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1A Peak Gate−Power Dissipation (IGT = IGTM), PGM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16W Average Gate Power Dissipation, PG(AV) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 500mW Operating Temperature Range, Topr . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −40° to +100°C Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −40° to +150°C Typical Thermal Resistance, Junction−to−Case, RthJC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3.0°C/W Electrical Characteristics: (TC = +25°C and “Maximum Ratings” unless otherwise specified) Parameter Symbol Test Conditions Min Typ Max Unit Peak Off−State Current IDRM, IRRM Rated VDRM or VRRM, TC = +110°C, RG − K = 1kΩ − − 0.1 mA Maximum On−State Voltage VTM IT = Rated Amps − − 2.0 V Gate Trigger Current, Continuous DC IGT Anode Voltage = 12V, RL = 60Ω − − 200 μA Gate Trigger Voltage, Continuous DC VGT Anode Voltage = 12V, RL = 60Ω − − 0.8 V DC Holding Current IH Gate Open, RG − K = 1kΩ − − 3.0 mA Turn−On Time tgt (td + tr) IGT = 150mA − − 2.5 μs Gate Open, TC = +110°C, RG − K = 1kΩ − 8 − V/μs Critical Rate of Rise of Off−State Voltage critical dv/dt .420 (10.67) Max .110 (2.79) .147 (3.75) Dia Max Isol .500 (12.7) Max .250 (6.35) Max .070 (1.78) Max .500 (12.7) Min Cathode Gate .100 (2.54) Anode