NTE5438

NTE5437 & NTE5438 Silicon Controlled Rectifier (SCR) 8 Amp Sensitive Gate, TO220 Description: The NTE5437 and NTE5438 are silicon controlled rectifiers (SCR) in a TO220 type package designed to provide a high dv/dt rate with strong resistance to electromagnetic interfaces. They are especially recommended for use on residual current circuit breakers, straight hair, igniters, etc. Absolute Maximum Ratings: Non−Repetitive Peak Off−State Voltage, VDSM NTE5437 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 400V NTE5438 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 600V Non−Repetitive Peak Reverse Voltage, VRSM NTE5437 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 400V NTE5438 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 600V RMS On−State Current (TC = +90C), IT(RMS) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8A Non−Repetitive Surge Peak On−State Current (tp = 10ms), ITSM . . . . . . . . . . . . . . . . . . . . . . . . . 100A Fusing Current (tp = 10ms), I2t . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50A2s Critical rate of Rise of ON−State Current, dI/dt . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50A/ms Peak Gate Current (tp = 20s, TJ = +110C), IGM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.2A Peak Gate Dissipation (tp = 20s, TJ = +110C), PGM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3W Average Gate Dissipation (TJ = +110C), PG(AV) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.2W Operating Junction Temperature Range, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −40 to +110C Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −40 to +150C Thermal Resistance, Junction−to−Case, RthJC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2.3C/W Electrical Characteristics: (TJ = +25C unless otherwise specified) Parameter Symbol Test Conditions Min Typ Max Unit Gate Trigger Current IGT VD = 12V, RL = 33 − 60 200 A Gate Trigger Voltage VGT VD = 12V, RL = 33 − − 0.8 V Gate Non−Trigger Voltage VGD VD = VDRM, TJ = +110C 0.2 − − V Latching Current IL IG = 1.2 IGT − − 6 mA Holding Current IH IT = 0.05A − − 5 mA VD = 526V, RGK = 100, TJ = +110C 50 100 − V/s Critical Rate of Voltage Rise dV/dt Rev. 11−19 Electrical Characteristics (Cont’d): (TJ = +25C unless otherwise specified) Parameter Symbol Test Conditions Min Typ Max Unit − − 1.6 V − − 10 A − − 2 mA Static Characteristics Maximum On−State Voltage Off−State Leakage Current VTM ITM = 24A, tp = 380s IDRM, IRRM VD = VDRM, VR = VRRM TJ = +110C .420 (10.67) Max .110 (2.79) .147 (3.75) Dia Max Anode .500 (12.7) Max .250 (6.35) Max .070 (1.78) Max Cathode .100 (2.54) .500 (12.7) Min Gate Anode