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NTE5444

NTE5444

  • 厂商:

    NTE

  • 封装:

    TO225AB

  • 描述:

    SCR 200V 8A TO127

  • 数据手册
  • 价格&库存
NTE5444 数据手册
NTE5442 thru NTE5448 Silicon Controlled Rectifier (SCR) 8 Amp, TO127 Description: The NTE5442 thru NTE5448 are silicon controlled rectifiers (SCR’s) in a TO127 type package designed for high−volume consumer phase−control applications such as motor speed, temperature, and light controls, and for fast switching applications in ignition and starting systems, voltage regulators, vending machines, and lamp drivers. Features: D Small, Rugged Construction D Practical Level Triggering and Holding Characteristics @ +25°C: IGT = 7mA Typ IHold = 6mA Typ D Low “ON” Voltage: VTM = 1V Typ @ 5A @ +25°C D High Surge Current Rating: ITSM = 80A Absolute Maximum Ratings: (Note 1, TJ = +100°C unless otherwise specified) Peak Repetitive Forward and Reverse Blocking Voltage (Note 2), VDRM or VRRM NTE5442 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50V NTE5444 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 200V NTE5446 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 400V NTE5448 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 600V Non−Repetitive Peak Reverse Blocking Voltage (t = 5ms (max) duration), VRSM NTE5442 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 75V NTE5444 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 300V NTE5446 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 500V NTE5448 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 700V RMS On−State Current (All Conduction Angles), IT(RMS) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8A Average On−State Current (TC = +73°C), IT(AV) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5.1A Peak Non−Repetitive Surge Current, ITSM (1/2 cycle, 60Hz preceeded and followed by rated current and voltage) . . . . . . . . . . . . . . 80A Circuit Fusing (TJ = −40° to +100°C, t = 1ms to 8.3ms), I2t . . . . . . . . . . . . . . . . . . . . . . . . . . . 25A2sec Peak Gate Power, PGM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5W Average Gate Power, PG(AV) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 500mW Peak Forward Gate Current, IGM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2A Peak Reverse Gate Voltage, VRGM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10V Operating Junction Temperature Range, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −40° to +100°C Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −40° to +150°C Maximum Thermal Resistance, Junction−to−Case, RthJC . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2.5°C/W Typical Thermal Resistance, Junction−to−Ambient, RthJA . . . . . . . . . . . . . . . . . . . . . . . . . . . . 40°C/W Note 1. NTE5446 is a discontinued device and is replaced by NTE5448. Note 2. Ratings apply for zero or negative gate voltage but positive gate voltage shall not be applied concurrently with a negative potential on the anode. When checking forward or reverse blocking capability, thyristor devices should not be tested with a constant current source in a manner that the voltage applied exceeds the rated blocking voltage. Electrical Characteristics: (TC = +25°C unless otherwise specified) Parameter Symbol Peak Forward or Reverse Blocking Current IDRM, IRRM Gate Trigger Current (Continuous DC) IGT Gate Trigger Voltage (Continuous DC) VGT Test Conditions VTM Holding Current IHold Typ Max Unit Rated VDRM or VRRM, Gate Open TJ = +25°C − − 10 μA TJ= +100°C − − 2 mA VD = 7V, RL = 100Ω TC = +25°C − 7 30 mA TC = −40°C − − 60 mA TC = +25°C − 0.75 1.5 V TC = −40°C − − 2.5 V 0.2 − − V Pulse Width = 1ms to 2 ms, ITM = 5Apeak Duty Cycle ≤ 2% ITM = 15.7Apeak − 1.0 1.5 V − − 2.0 V VD = 7V, Gate Open TC = +25°C − 6 40 mA TC = −40°C − − 70 mA VD = 7V, RL = 100Ω VD = Rated VDRM, RL = 100Ω, TJ = +100°C Peak On−State Voltage Min Gate Controlled Turn−On Time tgt ITM = 5A, IGT = 20mA, VD = Rated VDRM − 1 − μs Circuit Commutated Turn−Off Time tq ITM = 5A, IR = 5A − 15 − μs TJ= +100°C − 20 − μs VD = Rated VDRM, Exponential Waveform, TJ = +100°C, Gate Open − 50 − V/μs Critical Rate−of−Rise of Off−State Voltage dv/dt .530 (13.4) Max .143 (3.65) Dia Thru .668 (17.0) Max K G .655 (16.6) Max .166 (4.23) Heat Sink Contact Area (Bottom) A (Heat Sink Area) .150 (3.82) Max
NTE5444 价格&库存

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