NTE5465

NTE5461 thru NTE5468 Silicon Controlled Rectifier (SCR) 10 Amp, TO220 Description: The NTE5461 through NTE5468 series silicon controlled rectifiers are designed primarily for half− wave AC control applications such as motor controls, heating controls, and power supplies; or wherever half−wave silicon gate−controlled, solid−state devices are needed. These devices are supplied in a TO220 type package. Features; D Glass Passivated Junctions and Center Gate Fire for Greater Parameter Uniformity and Stability D Small, Rugged, Thermowatt Construction for Low Thermal Resistance, High Heat Dissipation, and Durability D Blocking Voltage to 800 Volts Absolute Maximum Ratings: Peak Repetitive Reverse Voltage; Peak Repetitive Off−State Voltage (Note 1), VRRM, VDRM NTE5461 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50V NTE5462 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100V NTE5463 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 200V NTE5465 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 400V NTE5466 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 600V NTE5468 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 800V Non−Repetitive Peak Reverse Voltage; Non−Repetitive Off−State Voltage, VRSM, VDSM NTE5461 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 75V NTE5462 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 125V NTE5463 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 250V NTE5465 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 500V NTE5466 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 700V NTE5468 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 900V RMS Forward Current (All Conducting Angles, TC = +75°C), IT(RMS) . . . . . . . . . . . . . . . . . . . . . . 10A Peak Forward Surge Current (1 Cycle, Sine Wave, 60Hz, TC = +80°C), ITSM . . . . . . . . . . . . . . 100A Circuit Fusing Considerations (TJ = −65° to +100°C, t = 1 to 8.3ms), I2t . . . . . . . . . . . . . . . . . . 40A2s Forward Peak gate Power (t ≤ 10μs), PGM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16W Forward Average Gate Power, PG(AV) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 500mW Operating Junction Temperature Range, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −40° to +100°C Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −40° to +150°C Thermal Resistance, Junction−to−Case, RthJC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2°C/W Note 1. VDRM and VRRM for all types can be applied on a continuous DC basis without incurring damage. Ratings apply for zero or negative gate voltage. Devices shall not have a positive bias applied to the gate concurrently with a negative potential on the anode. Electrical Characteristics: (TC = +25°C unless otherwise specified) Parameter Symbol Peak Forward or Reverse Blocking Current IDRM, IRRM Test Conditions Rated VDRM or VRRM Min Typ Max Unit TC = +25°C − − 10 μA TC = +100°C − − 2 mA Instantaneous On−State Voltage VT ITM = 30A(Peak), Pulse Width ≤ 1ms, Duty Cycle ≤ 2% − 1.7 2.0 V Gate Trigger Current (Continuous DC) IGT VD = 12V, RL = 30Ω − 8 15 mA Gate Trigger Voltage (Continuous DC) VGT VD = 12V, RL = 30Ω − 0.9 1.5 V Holding Current IH Gate Open, VD = 12V, IT = 150mA − 10 20 mA Gate Controlled Turn−On Time tgt VD = Rated VDRM, ITM = 2A, IGR = 80mA − 1.6 − μs Circuit Commutated Turn−Off Time tq VD = VDRM, ITM = 2A, Pulse Width = 50μs, dv/dt = 200V/μs, di/dt = 10A/μs, TC = +75°C − 25 − μs Critical Rate−of−Rise of Off−State Voltage dv/dt VD = Rated VDRM, Exponential Rise, TC = +100°C − 100 − V/μs .420 (10.67) Max .110 (2.79) .147 (3.75) Dia Max Anode .500 (12.7) Max .250 (6.35) Max .070 (1.78) Max Cathode .100 (2.54) .500 (12.7) Min Gate Anode