NTE5470

NTE5470 thru 5476 Silicon Controlled Rectifier (SCR) 5 Amp, TO64 Description: The NTE5470 through NTE5476 are multi−purpose PNPN silicon controlled rectifiers in a TO64 type stud mount package suitable for industrial and consumer applications. Features: D Uniform Low−Level Noise−Immune Gate Triggering D Low Forward “ON” Voltage D High Surge−Current Capability Absolute Maximum Ratings: (Apply over operating temperature range unless otherwise specified) Peak Repetitive Forward and Reverse Blocking Voltage (Note 1), VDRM, VRRM NTE5470 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50V NTE5471 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100V NTE5472 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 200V NTE5473 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 300V NTE5474 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 400V NTE5475 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 500V NTE5476 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 600V Forward Current RMS, ITRMS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8A Peak Forward Surge Current (One Cycle, 60Hz, TJ = −40° to +100°C), ITSM . . . . . . . . . . . . . . 100A Circuit Fusing (TJ = −40° to +100°C, t ≤ 8.3ms), I2t . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 40A2sec Peak Gate Power, PGM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5W Average Gate Power, PG(AV) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.5W Peak Gate Current, IGM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2A Peak Gate Voltage (Note 2), VGM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10V Operating Temperature Range, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −40° to +100°C Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −40° to +150°C Thermal Resistance, Junction−to−Case, RthJC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2.5°C/W Stud Torque . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15 in. lb. Note 1. Ratings apply for zero or negative gate voltage. Devices should not be tested for blocking capability in a manner such that the voltage applied exceeds the rated blocking voltage. Note 2. Devices should not be operated with a positive bias applied to the gate concurrently with a negative potential applied to the anode. Electrical Characteristics: (TC = +25°C unles otherwise specified) Parameter Symbol Test Conditions Min Typ Peak Forward or Reverse Blocking Current IDRM, IRRM Rated VDRM or VRRM, TJ = +25°C Gate Open TJ = +100°C − − 10 μA − − 2 mA VD = 7V, RL = 100Ω, Note 3 − 10 30 mA − − 60 mA − 0.75 1.5 V TC = −40°C − − 2.5 V TJ = +100°C 0.2 − − V Gate Trigger Current, Continuous DC Gate Trigger Voltage, Continuous DC Forward “ON” Voltage Holding Current IGT VGT TC = −40°C VD = 7V, RL = 100Ω Max Unit vTM ITM = 15.7A, Note 4 − 1.4 2.0 V IH VD = 7V, Gate Open − 10 30 mA − − 60 mA TC = −40°C Turn−On Time (td + tr) ton IG = 20mA, IF = 5A, VD = Rated VDRM − 1 − μs Turn−Off Time toff IF = 5A, IR = 5A, VD = Rated VDRM, dv/dt = 30V/μs − 15 − μs − 25 − μs − 50 − V/μs Forward Voltage Application Rate (Exponential) dv/dt TJ = +100°C Gate Open, TJ = +100°C, VD = Rated VDRM Note 3. For optimum operation, i.e. faster turn−on, lower switching losses, best di/dt capability, recommended IGT = 200mA minimum. Note 4. Pulsed, 1ms Max, Duty Cycle ≤ 1%. .431 (10.98 Max Gate Cathode .855 (21.7) Max .125 (3.17) Max .453 (111.5) Max Anode 10−32 UNF−2A