NTE5480

NTE5480 thru NTE5487 Silicon Controlled Rectifier (SCR) 8 Amp, TO64 Description: The NTE5480 through NTE5487 are multi−purpose PNPN silicon controlled rectifiers in a TO64 type package suited for industrial and consumer applications. These 8 amp devices are available in voltages ranging from 25V to 600V. Features: D Uniform Low−Level Noise−Immune Gate Triggering: IGT = 10mA Typ @ TC = +25°C D Low Forward “ON” Voltage: vT = 1V Typ @ 5A @ +25°C D High Surge−Current Capability: ITSM = 100A Peak D Shorted Emitter Construction Absolute Maximum Ratings: (TJ = −40° to +100°C unless otherwise specified) Peak Repetitive Forward and Reverse Blocking Voltage (Note 1), VDRM or VRRM NTE5480 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25V NTE5481 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50V NTE5482 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100V NTE5483 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 200V NTE5484 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 300V NTE5485 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 400V NTE5486 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 500V NTE5487 (This device is discontinued) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 600V Forward Current RMS, IT(RMS) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8A Peak Forward Surge Current (One Cycle, 60Hz, TJ = −40° to +100°C, ITSM . . . . . . . . . . . . . . . 100A Circuit Fusing (t ≤ 8.3ms, TJ = −40° to +100°C), I2t . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 40A2s Peak Gate Power, PGM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5W Average Gate Power, PG(AV) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.5W Peak Gate Current, IGM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2A Peak Gate Voltage (Note 2), VGM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10V Operating Temperature Range, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −40° to +100°C Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −40° to +150°C Typical Thermal Resistance, Junction−to−Case, RthJC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.5°C/W Typical Thermal Resistance, Case−to−Ambient, RthJA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50°C/W Note 1. Ratings apply for zero or negative gate voltage. Devices should not be tested for blocking capability in a manner such that the voltage applied exceeds the rated blocking voltage. Note 2. Devices should not be operated with a positive bias applied to the gate concurrently with a negative potential applied to the anode. Electrical Characteristics: (TC = +25°C unless otherwise specified) Parameter Peak Forward or Reverse Blocking Current Gate Trigger Current (Continuous DC) Gate Trigger Voltage (Continuous DC) Forward “ON” Voltage Holding Current Symbol IDRM, IRRM IGT VGT Test Conditions Min Typ Max Unit Rated VDRM or VRRM, TJ = +25°C Gate Open TJ = +100°C − − 10 μA − − 2 mA VD = 7V, RL = 100Ω, Note 3 − 10 30 mA − − 60 mA − 0.75 1.5 V TC = −40°C − − 2.5 V TJ = +100°C 0.2 − − V TC = −40°C VD = 7V, RL = 100Ω vTM ITM = 15.7A, Note 4 − 1.4 2.0 V IH VD = 7V, Gate Open − 10 30 mA − − 60 mA TC = −40°C Turn−On Time (td + tr) ton IG = 20mA, IF = 5A, VD = Rated VDRM − 1 − μs Turn−Off Time toff IF = 5A, IR = 5A, dv/dt = 30V/μs − 15 − μs − 25 − μs − 50 − V/μs Forward Voltage Application Rate (Exponential) dv/dt TJ = +100°C, VD = Rated VDRM Gate Open, TJ = +100°C, VD = Rated VDRM Note 3. For optimum operation, i.e. faster turn−on, lower switching losses, best di/dt capability, recommended IGT = 200mA minimum. Note 4. Pulsed, 1ms max., Duty Cycle ≤ 1%. .431 (10.98 Max Gate Cathode .855 (21.7) Max .125 (3.17) Max .453 (111.5) Max Anode 10−32 UNF−2A