NTE5491

NTE5491 thru NTE5496 Silicon Controlled Rectifier (SCR) 10 Amp, TO48 Description: The NTE5491 through NTE5496 are silicon controlled rectifiers designied primarily for half−wave AC control applications such as motor controls, heating controls, power supplies, or wherever half−wave silicon gate−controlled, solid−state devices are needed. Features: D Glass−Passivated Junctions and Center Gate Fire for Greater Parameter Uniformity and Stability D Blocking Voltage to 600 Volts Absolute Maximum Ratings: (TJ = +125°C unless otherwise specified) Peak Repetitive Off−State Blocking Voltage, VRRM, VDRM NTE5491 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100V NTE5492 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 200V NTE5494 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 400V NTE5496 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 600V Peak Non−Repetitive Reverse Voltage, VRSM NTE5491 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 150V NTE5492 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 300V NTE5494 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 500V NTE5496 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 720V RMS On−State Current (All Conduction Angles), IT(RMS) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25A Average On−State Current (TC = +65°C), IT(AV) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16A Peak Non−Repetitive Surge Current, ITSM (One cycle, 60Hz, Preceeded and followed by rated Current and Voltage) . . . . . . . . . . 150A Circuit Fusing Considerations (TJ = −40° to +125°C, t = 1 to 8.3ms), I2t . . . . . . . . . . . . . . . . . . 93A2s Peak Gate Power Dissipation, PGM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5W Average Gate Power Dissipation, PG(AV) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 500mW Peak Forward Gate Current, IGT NTE5491, NTE5492, NTE5494 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2.0A NTE5496 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.2A Operating Junction Temperature Range, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −65° to +125°C Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −65° to +150°C Typical Thermal Resistance, Junction−to−Case, RthJC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2°C/W Stud Torque . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30 in.lb. Electrical Characteristics: (TJ = +25°C unless otherwise specified) Parameter Symbol Average Forward Blocking Current NTE5491 ID(AV) Test Conditions Rated VDRM , Gate Open TJ = +125°C Min Typ Max Unit − − 6.5 mA NTE5492 − − 6.0 mA NTE5494 − − 4.0 mA NTE5496 − − 2.5 mA − − 6.5 mA NTE5492 − − 6.0 mA NTE5494 − − 4.0 mA NTE5496 − − 2.5 mA Average Reverse Blocking Current NTE5491 IR(AV) Rated VRRM , Gate Open TJ = +125°C Peak Forward Blocking Current IDRM Rated VDRM, Gate Open − − 10 μA Peak Reverse Blocking Current IRRM Rated VRRM, Gate Open, TJ = +125°C − − 20 mA Peak On−State Voltage VTM ITM = 50.3A Peak, Note 1 − − 2 V DC Gate−Trigger Current IGT VAK = 12VDC, RL = 50Ω − − 40 mA DC Gate−Trigger Voltage VGT VAK = 12VDC, RL = 50Ω − 0.65 2.0 V Gate Non−Trigger Voltage VGD Rated VDRM, RL = 50Ω, TJ = +125°C 0.25 − − V DC Holding Current Critical Rate−of−Rise of Off−State Voltage IH dv/dt VAK = 12V, Gate Open − 7.3 50 mA Rated VDRM, Exponential Waveform, TC = +125°C, Gate Open − 30 − V/μs Note 1. Pulse Test: Pulse Width ≤ 1ms, Duty Cycle ≤ 2%. .562 (14.28) Max Gate Cathode 1.193 (30.33) Max .200 (5.08) Max .453 (11.5) Max Anode 1/4−28 UNF−2A