NTE5498

NTE5498 & NTE5499 Silicon Controlled Rectifier (SCR) 12 Amp, TO220 Description: The NTE5498 and NTE5499 silicon controlled rectifiers are high performance glass passivated PNPN devices in a TO220 type package designed for general purpose high current applications where moderate gate sensitivity is required. Absolute Maximum Ratings: (TA = +25°C unless otherwise specified) Peak Repetitive Off−State Voltage (TJ = −40° to +125°C, RGK = 1kΩ), VDRM, VRRM NTE5498 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 400V NTE5499 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 800V RMS On−State Current (All Conduction Angles, TC = +85°C), IT(RMS) . . . . . . . . . . . . . . . . . . . . . 12A Average On−State Current (Half Cycle, 180° Conduction Angle, TC = +85°C), IT(AV) . . . . . . . . 7.6A Non−Repetitive On−State Current (Half Cycle, 60Hz), ITSM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 132A Non−Repetitive On−State Current (Half Cycle, 50Hz), ITSM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 120A Circuit Fusing Considerations (Half Cycle, t = 10ms), I2t . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 72A2s Peak Gate Current (10μs Max), IGM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4A Peak Gate Dissipation (10μs Max), PGM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10W Average Gate Dissipation (20ms Max), PG(AV) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1W Operating Junction Temperature Range, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −40° to +125°C Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −40° to +125°C Thermal Resistance, Junction−to−Case, RthJC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3K/W Thermal Resistance, Junction−to−Ambient, RthJA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 60K/W Lead Temperature (During Soldering, 1.6mm from case, 10sec max), TL . . . . . . . . . . . . . . . +250°C Electrical Characteristics: (TA = +25°C unless otherwise specified) Parameter Symbol Off−State Leakage Current IDRM, IRRM On−State Voltage VT Test Conditions Min Typ Max Unit TJ = +125°C − − 1.5 mA TJ = +25°C − − 5.0 μA IT = 24A, TJ = +25°C − − 1.8 V VDRM + VRRM, RGK = 1kΩ On−State Threshold Voltage VT(TO) TJ = +125°C − − 1.0 V On−State Slope Resistance rT TJ = +125°C − − 36 mΩ Gate−Trigger Current IGT VD = 7V 5 − 10 mA Gate−Trigger Voltage VGT VD = 7V − − 2.0 V Electrical Characteristics (Cont’d): (TA = +25°C unless otherwise specified) Parameter Symbol Test Conditions Min Typ Max Unit Holding Current IH RGK = 1kΩ − − 40 mA Latching Current IL RGK = 1kΩ − − 30 mA Critical Rate of Voltage Rise dv/dt VD = .67 x VDRM, RGK = 1kΩ, TJ = +125°C 100 − − V/μs Critical Rate of Current Rise di/dt IG = 50mA, diG/dt = 0.5A/μs, TJ = +125°C 100 − − A/μs Gate Controlled Delay Time tgd IG = 50mA, diG/dt = 0.5A/μs − − 500 ns Commutated Turn−Off Time tq VD = .67 x VDRM, VR = 35V, IT = IT(AV), TC = +85°C − − 50 μs .420 (10.67) Max .110 (2.79) .147 (3.75) Dia Max Anode .500 (12.7) Max .250 (6.35) Max .070 (1.78) Max Cathode .100 (2.54) .500 (12.7) Min Gate Anode