NTE5512

NTE5511 thru NTE5513 Silicon Controlled Rectifier (SCR) 5 Amp, TO66 Description: The NTE5511 thru NTE5513 all−diffused, three junction, silicon controlled rectifiers (SCR’s) are intended for use in power−control and power−switching applications. These devices are available in a TO66 type package and have a blocking voltage capability of up to 600V and a forward current rating of 5A (rms value) at a case temperature of +75°C. Features: D Designed Especially for High−Volume Systems D Direct−Soldered Internal Construction Assures Exceptional Resistance to Fatigue D Readily Adaptable for PC Boards and Metal D Symmetrical Gate−Cathode Construction ProHeat Sinks vides Uniform Current Density, Rapid Electrical D Low Switching Losses Conduction, and Efficient Heat Dissipation D High di/dt and dv/dt Capabilities D All−Welded Construction and Hermetic Sealing D Shorted Emitter Gate−Cathode Construction D Low Leakage Currents, Forward and Reverse D Forward and Reverse Gate Dissipation Ratings D Low Forward Voltage Drop at High Current Levels D All−Diffused Construction Assures Exceptional D Low Thermal Resistance Uniformity and Stability of Characteristics Absolute Maximum Ratings: (For Operation with Sinusoidal AC Supply Voltage at a Frequency between 50Hz and 400Hz, and with Resistive or Inductive Load) Transient Peak Reverse Voltage (Non−Repetitive), VRM (non−rep) NTE5511 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 330V NTE5512 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 660V NTE5513 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 700V Peak Reverse Voltage (Repetitive), VRM (rep) NTE5511 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 200V NTE5512 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 400V NTE5513 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 600V Peak Forward Blocking Voltage (Repetitive), VFBOM (rep) NTE5511 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 600V NTE5512 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 600V NTE5513 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 700V Average DC Forward Current, IF(av) (TC = +75°C mounted on heat sink, conduction angle or 180°) . . . . . . . . . . . . . . . . . . . . 3.2A RMS Forward Current (TC = +75°C mounted on heat sink), IFRMS . . . . . . . . . . . . . . . . . . . . . . . . . 5A Peak Surge Current (For one cycle of applied voltage), iFM(surge) . . . . . . . . . . . . . . . . . . . . . . . . . 60A Sub−Cycle Surge (Non−Repetitive, for a period of 1ms to 8.3ms), I2t . . . . . . . . . . . . . . . . . . 15A2sec Rate of Change of Forward Current (Note 1), di/dt . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 200A/μs Gate Power (Peak, Forward, or Reverse, for 10μs duration, Note 2), PGM . . . . . . . . . . . . . . . . 13W Average Gate Power (Note 2), PGAV . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 500mW Operating Case Temperature Range, TC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −40° to +100°C Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −40° to +125°C Note 1. VFB = vBOO(min value), IGT = 200mA, 0.5μs rise time Note 2. Any values of peak gate current or peak gate voltage to give the maximum gate power is permissible. Electrical Characteristics: (At Maximum Ratings, TC = +25°C unless otherwise specified) Parameter Symbol Min Typ Max Unit 200 − − V NTE5512 400 − − V NTE5513 600 − − V − 0.10 1.5 mA Forward Breakover Voltage NTE5511 vBOO Peak Blocking Forward Current NTE5511 Test Conditions TC = +100°C IFBOM VFBO = 200V TC = +100°C NTE5512 VFBO = 400V − 0.20 3.0 mA NTE5513 VFBO = 600V − 0.40 4.0 mA − 0.05 0.75 mA Peak Blocking Reverse Current NTE5511 IRBOM VRBO = 200V TC = +100°C NTE5512 VRBO = 400V − 0.10 1.5 mA NTE5513 VRBO = 600V − 0.20 2.0 mA IF = 30A − 2.15 2.80 V Forward Voltage Drop vF DC Gate−Trigger Current IGT − 8 15 mA DC Gate−Trigger Voltage VGT − 1.2 2.0 V Holding Current IHold − 10 20 mA Critical Rate of Applied Forward Voltage dv/dt 10 200 − V/μs 0.75 1.5 − μs − 15 50 μs − − 4 °C/W VFB = vBOO (min), exponential rise, TC = +100°C Turn−On Time (Delay Time + Rise Time) ton VFB = vBOO (min), iF = 4.5A, IGT = 200mA, 0.1μs rise time Turn−Off Time (Reverse Recovery Time + Gate Recovery Time) toff iF = 2A, 50μs pulse width, dvFB/dt = 20V/μs, dir/dt = 30A/μs, IGT = 200mA, TC = +75°C Thermal Resistance, Junction−to−Case RΘJC .485 (12.3) Dia .295 (7.5) .062 (1.57) .031 (0.78) Dia .960 (24.3) .360 (9.14) Min Gate .580 (14.7) .147 (3.75) Dia (2 Places) .200 (5.08) .145 (3.7) R Max Anode/Case Cathode