NTE5514

NTE5514 thru NTE5516 Silicon Controlled Rectifier (SCR) 20 Amp, 1/2” Press Fit Absolute Maximum Ratings: Repetitive Peak Off−State Voltage (TJ = +100°C), VDRM NTE5514 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 200V NTE5515 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 400V NTE5516 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 600V Repetitive Peak Reverse Voltage (TJ = +100°C), VRRM NTE5514 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 200V NTE5515 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 400V NTE5516 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 600V RMS On−State Current (TC = +75°C), IT(RMS) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20A Peak Surge (Non−Repetitive) On−State Current (One Cycle, 50Hz or 60Hz), ITSM . . . . . . . . . 200A Peak Gate−Trigger Current (3μs Max), IGTM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20A Peak Gate−Power Dissipation (IGT ≤ IGTM for 3μs Max), PGM . . . . . . . . . . . . . . . . . . . . . . . . . . . 20W Average Gate−Power Dissipation, PG(AV) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.5W Operating Temperatue Range, Topr . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −40° to +150°C Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −40° to +100°C Typical Thermal Resistance, Junction−to−Case, RthJC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.3°C/W Electrical Characteristics: (At Maximum Ratings and Specified Case Temperatures) Parameter Symbol Test Conditions Min Typ Max Unit Peak Off−State Current IDRM, IRRM TJ = +100°C, Gate Open, VDRM and VRRM = Max. Rating − − 2.0 mA Maximum On−State Voltage (Peak) VTM TC = +25°C − − 1.9 V Peak On−State Current ITM − − 40 A DC Holding Current IH TC = +25°C, Gate Open − − 50 mA DC Gate−Trigger Current IGT Anode Voltage = 12V, RL = 30Ω, TC = +25°C − − 25 mA DC Gate−Trigger Voltage VGT Anode Voltage = 12V, RL = 30Ω, TC = +25°C − − 2.0 V td + tr, IGT = 150mA − 2.5 − μs TC = +100°C, Gate Open − 100 − V/μs Gate Controlled Turn−On Time Critical Rate−of−Rise of Off−State Voltage tgt Critical dv/dt .155 (3.93) Max Cathode Gate .085 (2.15) .063 (1.6) .767 (19.5) Max .380 (9.65) Max .475 (12.09) Max Anode .505 (12.85) Max