NTE5534A

NTE5534A Silicon Controlled Rectifier (SCR) 600V, 50 Amp, TO3 Isolated Square Pack Description: The NTE5534A is a general purpose SCR in a TO3 isolated high power square pack designed for use in applications where power handling and power dissipation are critical, such as solid state relays, welding equipment, and high power motor controls. Based on a clip assembly technology, the NTE5534A offers superior performance in surge current handling capabilities. Features: D High Stability and Reliability D High Surge Capability D High On−State Current D Easy Mounting (Fast−On Connections) D Isolated Package: Insulating Voltage = 2500VRMS Absolute Maximum Ratings: (Limiting Values) RMS On−State Current (TC = +75°C, 180° Conduction Angle), IT(RMS) . . . . . . . . . . . . . . . . . . . . 50A Average On−State Current (TC = +75°C, 180° Conduction Angle), IT(AV) . . . . . . . . . . . . . . . . . . . 32A Non−Repetitive Surge Peak On−State Current (TJ = +25°C), ITSM t = 8.3ms . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 610A t = 10ms . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 580A I2t Value for Fusing (TJ = +25°C), I2t . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1680A2s Critical Rate of Rise On−State Current, dI/dt (IG = 160mA, tr ≤ 100ns, F = 60Hz, TJ = +125°C) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50A/μs Peak Gate Current (tp = 20μs, TJ = +125°C), IGM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8A Average Gate Power Dissipation (TJ = +125°C), PG(AV) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1W Maximum Peak Reverse Gate Voltage, VGRM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5V Operating Junction Temperature Range, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −40° to +125°C Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −40° to +150°C Thermal Resistance, Junction−to−Case, RthJC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.9°C/W Thermal Resistance, Junction−to−Ambient, RthJA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50°C/W Rev. 4−10 Electrical Characteristics: (TJ = +25°C unless otherwise specified) Parameter Symbol Test Conditions Min Typ Max Unit Gate Trigger Current IGT VD = 12V, RL = 33Ω 8 − 80 mA Gate Trigger Voltage VGT VD = 12V, RL = 33Ω − − 1.3 V Gate Non−Trigger Voltage VGD TJ = +125°C, VD = 600V, RL = 3.3kΩ 0.2 − − V Holding Current IH IT = 500mA, Gate Open − − 150 mA Latching Current IL IG = 1.2 x IGT − − 200 mA Critical Rise of Off−State Voltage dV/dt TJ = 125°C, Gate Open, VD = 402V 1000 − − V/μs Peak On−State Voltage VTM ITM = 100A, tp = 380μs, TJ = 25°C − − 1.9 V Threshold Voltage VTO TJ = 125°C − − 1.0 V Rd TJ = 125°C − − 8.5 mΩ VDRM = 600V − − 10 μA − − 5 mA − − 10 μA − − 5 mA Dynamic Resistance Peak Forward Blocking Current IDRM TJ = +125°C Peak Reverse Blocking Current IRRM VDRM = 600V TJ = +125°C .535 (13.6) Max 1.193 (30.3) Max Anode .177 (4.5) Max 1.063 (27.0) Max 38° Max 43° Max Cathode Gate .867 (22.0) Max .945 (24.0) Max .551 (14.0) Max 1.575 (40.0) Max .118 (3.0) Max