NTE5552-I

NTE5552−I, NTE5554−I, NTE5556−I, NTE5558−I Silicon Controlled Rectifier (SCR) 25 Amp, TO220AB Isolated Tab Description: The NTE5552−I thru NTE5558−I are 25 Amp SCR’s designed primarily for half−wave AC control applications, such as motor controls, overvoltage crowbar protection, capacitive discharge ignition, voltage regulation, and welding equipment. Features: D Suitable for General Purpose AC Switching D IGT 40mA Max. D Isolated Tab Absolute Maximum Ratings: (TA = +25_C unless otherwise specified) Repetitive Peak Off−State Voltage, VDRM NTE5552−I . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 200V NTE5554−I . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 400V NTE5556−I . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 600V NTE5558−I . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 800V Peak Reverse Blocking Voltage, VRRM NTE5552−I . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 200V NTE5554−I . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 400V NTE5556−I . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 600V NTE5558−I . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 800V Maximum Peak Reverse Gate Voltage, VRGM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5V RMS On−State Current (Full Sine Wave, TC = +75_C), IT(RMS) . . . . . . . . . . . . . . . . . . . . . . . . . . . 25A Average On−State Current (TC = +75_C), IT(AV) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16A Non−Repetitive Surge Peak On−State Current (Full Cycle, TJ Initial = +25_C), ITSM F = 50Hz . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 320A F = 60Hz . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 350A 2 I t Value for Fusing (tp = 10ms), I2t . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 510A2s Critical Rate of Rise of On−State Current (IG = 2 x IGT, tr < 100ns, TJ = +125_C), di/dt NTE5552−I, NTE5554−I, NTE5556−I . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100A/ms NTE5558−I . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50A/ms Forward Peak Gate Current (tp = 20ms, TJ = +125_C), IGM NTE5552−I, NTE5554−I, NTE5556−I . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2A NTE5558−I . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4A Average Gate Power Dissipation (TJ = +125_C), PG(AV) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1W Isolation Voltage, VISO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2500VRMS Rev. 5−14 Absolute Maximum Ratings (Cont’d): (TA = +25_C unless otherwise specified) Operating Junction Temperature Range, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −40_ to +125_C Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −40_ to +150_C Thermal Resistance, Junction−to−Case, RthJC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.9_C/W Thermal Resistance, Junction−to−Ambient, RthJA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 60_C/W Electrical Characteristics: (TC = +25_C unless otherwise noted.) Parameter Symbol Min Gate Trigger Current (VD = 12V, RL = 30W) Gate Trigger Voltage (VD = 12V, RL = 30W) Gate Non−Trigger Voltage (VD = Rated VDRM, RL =3.3kW, TJ = +125_C) IGT VGT VGD − − 0.2 − − − 40 1.3 − mA V V Holding Current (IT = 500mA, Gate Open) Latching Current (IG = 1.2 IGT) Critical Rate of Rise of Off−State Voltage (VD = 67% VDRM, Gate Open, TJ = +125_C) IH IL dv/dt − − 1000 − − − 50 90 − mA mA V/ms VTM − − − − 1.6 1.6 V V − − − − 5 4 mA mA Forward “ON” Voltage NTE5558−I (ITM = 32A, tp = 380ms, TJ = +25_C) All Other Devices (ITM = 50A, tp = 380ms, TJ = +25_C) Peak Forward or Reverse Blocking Current, (Rated VDRM or VRRM) TJ = +25_C TJ = +125_C .408 (10.36) Max IDRM, IRRM .052 (1.32) Max .190 (4.83) Max .108 (2.74) .153 (3.89) Dia Max Isol .512 .127 (13.0) (3.23) Max Max .503 (12.78) Min .037 (0.94) Max Cathode .100 (2.54) Gate Anode Typ Max Unit