NTE5556

NTE5550 thru NTE5558 Silicon Controlled Rectifier (SCR) 25 Amp, TO220 Description: The NTE5550 thru NTE5558 SCR’s are designed primarily for half−wave AC control applications, such as motor controls, heating controls and power supply crowbar circuits. Features: D Glass Passivated Junctions with Center Gate Fire for Greater Parameter Uniformity and Stability. D Small, Rugged, Thermowatt Constructed for Low Thermal Resistance, High Heat Dissipation and Durability. D Blocking Voltage to 800 Volts D 300A Surge Current Capability Absolute Maximum Ratings: Peak Reverse Blocking Voltage (Note 1), VRRM NTE5550 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50V NTE5552 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 200V NTE5554 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 400V NTE5556 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 600V NTE5558 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 800V Forward Current (TC = +85°C), IT(RMS) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25A (All Conduction Angles), IT(AV) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16A Peak Non−Repetitive Surge Current (8.3ms), ITSM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 300A (1/2 Cycle, Sine Wave, 1.5ms) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 350A Forward Peak Gate Power, PGM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20W Forward Average Gate Power, PG(AV) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.5W Forward Peak Gate Current, IGM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2A Operating Junction Temperature Range, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −40° to +125°C Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −40° to +150°C Thermal Resistance, Junction−to−Case, RthJC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.5°C/W Note 1. VRRM for all types can be applied on a continuous dc basis without incurring damage. Ratings apply for zero or negative gate voltage. Devices should not be tested for blocking capability in a manner such that the voltage supplied exceeds the rated blocking voltage. Electrical Characteristics: (TC = +25°C unless otherwise noted.) Parameter Symbol Peak Forward Blocking Voltage, (TJ = +125°C) NTE5550 NTE5552 NTE5554 NTE5556 NTE5558 VDRM Min Typ Max Unit V 50 200 400 600 800 − − − − − − − − − − − − − − 10 2 μA mA VTM − − 1.8 V IGT − − − 25 40 75 mA Gate Trigger Voltage (Continuous DC) (Anode Voltage = 12Vdc, RL = 100Ω, TC = −40°C) VGT − 1 1.5 V Gate Non−Trigger Voltage (Anode Voltage = Rated VDRM, RL =100Ω, TJ = +125°C) VGD 0.2 − − V Holding Current (Anode Voltage = 12Vdc, TC = −40°C) IH − 35 40 mA Turn−On Time (ITM = 25A, IGT = 50mAdc) tgt − 1.5 2 μs Turn−Off Time (VDRM = rated voltage) (ITM =25A, IR = 25A) (ITM =25A, IR = 25A, TJ = +125°C) tq − − 15 35 − − − 50 − Peak Forward or Reverse Blocking Current, (Rated VDRM or VRRM) TJ = +25°C TJ = +125°C IDRM, IRRM Forward “ON” Voltage, (ITM = 50A, Note 2) Gate Trigger Current (Continuous DC), (Anode Voltage = 12Vdc, RL = 100Ω) TC = +25°C TC = −40°C Critical Rate of Rise of Off−State Voltage (Gate Open, Rated VDRM, Exponential Waveform) dv/dt Note 2. Pulse Test: Pulse Width ≤ 300μs, Duty Cycle ≤ 2%. .420 (10.67) Max .110 (2.79) .147 (3.75) Dia Max .500 (12.7) Max .250 (6.35) Max .070 (1.78) Max .500 (12.7) Min Cathode Gate .100 (2.54) Anode/Tab μs V/μs