NTE5564

NTE5562, NTE5564, NTE5566 Silicon Controlled Rectifiers (SCR) 35 Amp, TO48 Isolated Stud Description: The NTE5562, NTE5564 and NTE5566 are silicon controlled rectifiers in a TO−48 isolated stud TO−48 type package designed for industrial and consumer applications such as power supplies, battery chargers, temperature, motor, light and welder controls. Absolute Maximum Ratings: Repetitive Peak Off−State Voltage & Reverse Voltage (TJ = +100°C), VDRM, VRRM NTE5562 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 200 NTE5564 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 400V NTE5566 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 600V RMS On−State Current (TC = +75°C), IT(RMS) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 35A Peak Surge (Non−Repetitive) On−State Current, ITSM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 300A Peak Gate−Trigger Current (3μs Max), IGTM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20 Peak Gate−Power Dissipation (IGT ≤ for 3μs Max), PGM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20W Average Gate Power Dissipation, PG(AV) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20W Operating Temperature Range, Toper . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −40° to +150°C Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −40° to +150°C Typical Thermal Resistance, Junction−to−Case, RthJC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.6/W Electrical Characteristics: (At Maximum Ratings and Specified Case Temperatures) Parameter Symbol Test Conditions Min Typ Peak Off−State Current IDRM, IRRM TJ = +100°C, Gate Open, VDRM &VRRM − − 2.0 mA Maximum On−State Voltage (Peak) VTM TC = +25°C − − 1.6 V DC Holding Current IHO TC = +25°C, Gate Open − − 50 mA DC Gate Trigger Current IGT Anode Voltage = 12Vdc, RL = 30Ω, TC =+ 25°C − − 30 mA DC Gate Controlled Turn−On Time TGT IGT = 150mA , tD+tR − 2.5 − μs TC = +100°C, Gate Open − 100 − V/μs Critical Rate of Rise of Off−State Voltage Critical dv/dt Max Unit .562 (14.28) Max Cathode Anode Gate 1.260 (32.0) Max .595 (15.1) Max .445 (11.3) Max 1/4−28 UNF−2A Isolated Stud