NTE5568

NTE5567, NTE5568, NTE5569, & NTE5571 Silicon Controlled Rectifier (SCR) 80 Amp (IT(RMS)), TO65 (TO208AC) Features: D High Current Rating D Excellent Dynamic Characteristics D Superior Surge Capabilities D Standard Package Voltage Ratings and Electrical Characteristics: (TJ = +125C unless otherwise specified) Parameter Values Unit 200 V NTE5568 600 V NTE5569 1200 V NTE5571 1600 V 300 V NTE5568 700 V NTE5569 1300 V NTE5571 1700 V 15 mA TC = +94C 50 A TC = +90C 50 A 80 A t = 10ms, No Voltage Reapplied, Sinusoidal Half Wave 1200 A t = 10ms, Sinusoidal Half Wave No Voltage Reapplied 10.18 KA2s 7.21 KA2s 100% VRRM Reapplied 7.20 KA2s 5.10 KA2s Maximum Repetitive Peak Forward & Reverse Voltage NTE5567 Maximum Non−Repetitive Peak Voltage NTE5567 Symbol VDRM, VRRM VRSM Peak Reverse & Off−State Current IDRM, IRRM Average On−State Current NTE5567, NTE5568, NTE5569 IT(AV) NTE5571 RMS On−State Current Peak One−Cycle Non−Repetitive Surge Current I2t for Fusing NTE5567, NTE5568, NTE5569 NTE5571 NTE5567, NTE5568, NTE5569 NTE5571 Test Conditions Note 1 Note 2 180 Sinusoidal Conduction IT(RMS) ITSM I2t Note 1. Units may be broken over non−repetitively in the off−state direction without damage, if di/dt does not exceed 20A/s. Note 2. For voltage pulses with tp  5ms. Rev. 6−19 Voltage Ratings and Electrical Characteristics (Cont’d): (TJ = +125C unless otherwise specified) Parameter I2t for Fusing NTE5567, NTE5568, NTE5569 Symbol I2t NTE5571 Low Level Value of Threshold Voltage NTE5567, NTE5568, NTE5569 IT(TO) Test Conditions Values Unit t = 0.1 to 10ms, No Voltage Reapplied 10.18 KA2s 7.21 KA2s 16.7% x  x IT(AV) < I <  x IT(AV) 0.94 V 1.02 V 1.08 V 1.17 V 4.08 m 4.78 m 3.34 m 3.97 m 1.60 V 1.78 V NTE5571 High Level Value of Threshold Voltage NTE5567, NTE5568, NTE5569 IT(TO)2  x IT(AV) < I < 20 x  x IT(AV) NTE5571 Low Level Value of On−State Slope Resistance NTE5567, NTE5568, NTE5569 rT1 16.7% x  x IT(AV) < I