NTE5572

NTE5570, NTE5572, & NTE5574 Silicon Controlled Rectifier (SCR) 125 Amp, TO94 Electrical Characteristics: (Maximum values @ TJ = +125°C unless otherwise specified) Repetitive Peak Voltages, VDRM & VRRM NTE5570 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 200V NTE5572 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 600V NTE5574 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1200V Non−Repetitive Peak Reverse Blocking Voltage, VRSM NTE5570 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 500V NTE5572 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 900V NTE5574 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1300V Average On−State Current (Half Sine Wave, 180°, TC = +85°C), IT(AV) . . . . . . . . . . . . . . . . . . . . 80A RMS On−State Current (DC @ TC = +75°C), IT(RMS) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 125A Peak One−Cycle, Non−Repetitive Surge Current (10ms Duration, Sinusoidal Half Wave), ITSM No Voltage Reapplied . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1900A 100% VRRM Reapplied . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1600A Maximum I2t for Fusing (10ms Duration, Sinusoidal Half Wave), I2t No Voltage Reapplied . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18000A2sec 100% VRRM Reapplied . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12700A2sec Peak Positive Gate Current (5ms Pulse Width), IGM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3A Peak Positive Gate Voltage (5ms Pulse Width), +VGM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20V Peak Negative Gate Voltage (5ms Pulse Width), −VGM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10V Average Gate Power (f = 50Hz, Duty Cycle = 50%), PG . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3W Peak Gate Power (50ms Pulse Width), PGM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12W Rate of Rise of Off−State Voltage (Exponential to 67% Rated VDRM), dv/dt . . . . . . . . . . . . . 500V/μs Rate of Rise of ON−State Current, di/dt (Gate Drive 20V, 65Ω, with tr = 0.5μs, Vd = Rated VDRM, ITM = 2 x di/dt snubber 0.2μF) Non−Repetitive . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 300A/μs Typical Delay Time, td (Gate Pulse: 10V, 15Ω Source, tp = 6μs, tr = 0.1μs, Vd = rated VDRM, ITM = 50A) . . . . . . 1μs Typical Turn−On Time, tq (ITM = 50A, di/dt = −5A/μs min, VR = 50V, dv/dt = 20V/μs, Gate Bias: 0V 25Ω, tp = 500μs) 110μs On−State Voltage (IPk = 250A, 10ms Sine Pulse), VTM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.6V Repetitive Peak Off−State Current (At VDRM), IDRM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15mA Repetitive Peak Reverse Current (At VRRM), IRRM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15mA Maximum Gate Current Required to Trigger, IGT (6V Anode−to−Cathode Applied, TJ = +25°C) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 120mA Maximum Gate Voltage Required to Trigger, VGT (6V Anode−to−Cathode Applied, TJ = +25°C) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2.5V Maximum Holding (Anode Supply 12V Resistive Load, TJ = +25°C), IH . . . . . . . . . . . . . . . . . 150mA Maximum Gate Voltage which will not Trigger any Device, VGD . . . . . . . . . . . . . . . . . . . . . . . . . 0.25V Electrical Characteristics (Cont’d): (Maximum values @ TJ = +125°C unless otherwise specified) Operating Temperature Range, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −40° to +125°C Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −40° to +150°C Thermal Resistance, Junction−to−Case (DC Operation), RtnJC . . . . . . . . . . . . . . . . . . . . . . . 0.3°C/W Thermal Resistance, Case−to−Heat Sink, RthC−HS (Mounting Surface Smooth, Flat, and Greased) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.1°C/W 1.227 (31.18) Max (Across Corners) ÇÇ ÇÇ ÇÇ .875 (22.22) Dia (Ceramic) For No. 6 Screw Cathode .280 (7.11) Dia Max Gate (White) 7.500 Cathode (190.5) (Red) Max (Terminals 1 & 2) 6.260 (159.0) Max (Terminal 3) 2.500 (63.5) Max 1.031 (26.18) Dia Max Seating Plane .827 (27.0) Max .500 (12.7) Max) 1/2−20 UNF Anode