NTE56031

NTE56030 & NTE56031 TRIAC, 40 Amp TO−218 Isolated Tab Description: The NTE56030 and NTE56031 are 40 Amp TRIACs in a TO−218 type package with an isolated tab designed to be driven directly with IC and MOS devices. Applications: D Phase Control D Static Switching D Light Dimming D Motor Speed Control D Kitchen Equipment D Power Tools D Solenoid Controls: Dishwashers Washing Machines Absolute Maximum Ratings: (TA = +25C unless otherwise specified) Peak Repetitive Off−State Voltage (IGT = 50mA), VDRM NTE56030 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 400V NTE56031 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 600V RMS On−State Current (TC = +95C, Full Sine Wave), IT(RMS) . . . . . . . . . . . . . . . . . . . . . . . . . . 40A Non−Repetitive Surge Peak On−State Current (Full Cycle, Initial TJ = +25C), ITSM 50Hz . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 400A 60Hz . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 420A I2t Value for Fusing (tp = 10ms), I2t . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1000A2s Critical Rate of Rise of On−State Current (IG = 2 x IGT, tr < 100ns, TJ = +125C), di/dt . . . . 50A/s Peak Gate Current (tp = 20s, TJ = +125C), IGM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8A Average Gate Power Dissipation (TJ = +125C), PG(AV) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1W Isolation Voltage, VISO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2500VRMS Operating Junction Temperature Range, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −40 to +125C Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −40 to +150C Electrical Characteristics: (TJ = +25C unless otherwise specified) Parameter Symbol Test Conditions Min Typ Max Unit Peak Off−State Current IDRM TJ = +25C, VDRM = VRRM − − 5 A Peak Reverse Current IRRM TJ = +125C, VDRM = VRRM − 5 3 mA IGT VD = 12V, RL = 30, Note 1 − − 50 mA − − 100 mA Gate Trigger Current Quadrant I, II, III Quadrant IV Note 1. Minimum IGT is guaranteed at 5% of IGTmax. Note 2. For both polarities of A2 referenced to A1. Rev. 2−15 Electrical Characteristics (Cont’d): (TJ = +25C unless otherwise specified) Parameter Symbol Test Conditions Gate Trigger Voltage VGT VD = 12V, RL = 30 Gate Non−Trigger Voltage VGD VD = VDRM, TJ = +125C, RL = 3.3k Holding Current IH IT = 100mA, Note 2 Latching Current Quadrant I, III, IV IL IG = 1.2IGT Quadrant II Critical Rate of Rise of Off−State Voltage Critical Rate of Rise of Commutation Voltage dv/dt VD = 67%VDRM, Gate Open, TJ = +125C, Note 2 dv/dt(c) di/dt(c) = 13.3A/ms, TJ = +125C, Note 2 Min Typ Max Unit − − 1.3 V 0.2 − − V − − 80 mA − − 75 mA − − 160 mA 500 − − V/s 10 − − V/s Peak On−State Voltage VTM ITM = 35A, tp = 380s, Note 2 − − 1.55 V Threshold Voltage VTO TJ = +125C, Note 2 − − 0.85 V rD TJ = +125C, Note 2 − − 10 m Dynamic Resistance Note 1. Minimum IGT is guaranteed at 5% of IGTmax. Note 2. For both polarities of A2 referenced to A1. .626 (15.92) .166 Max (4.23) Dia Max Isol .200 (5.08) Max .147 (3.76) .815 (20.72) .490 (12.44) MT1 MT2 Gate .500 (12.7) Min .215 (5.47) .110 (2.79) .050 (1.27)