NTE56033

NTE56033 TRIAC, 45 Amp Features: D Blocking Voltage of 600V D Glass–Passivated Chip D Gate Triggering Guaranteed in Four Modes D Excellent Thermal Impedance and High Reliability Construction Absolute Maximum Ratings: Peak Repetitive Off–State Voltage (1/2 Sine Wave 6.3µs), VDRM . . . . . . . . . . . . . . . . . . . . . . . . 600V On–State RMS Current (TC = +60°C, 360° Conduction Angle), IT(RMS) . . . . . . . . . . . . . . . . . . . 40A Peak Non–Repetitive Surge Current (+25° < TJ initial < +110°C, One Full Cycle), ITSM 60Hz . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 420A 50Hz . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 400A Circuit Fusing (t = 10ms), I2t . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 800A2s Peak Gate Current (t = 10µs, Note 1), IGM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ±10A Peak Gate Voltage (t = 10µs, Note 1), VGM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ±16V Peak Gate Power (t = 10µs, Note 1), PGM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 40W Average Gate Power, PG(AV) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1W Operating Junction Temperature Range, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –40° to +110°C Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –40° to +125°C Thermal Resistance, Contact (with Grease), RthCH . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.2°C/W Thermal Resistance, Junction–to–Case, RthJC(DC) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.33°C/W Thermal Resistance, Junction–to–Case (F = 50Hz, 360° Conduction Angle), RthJC(AC) . . . . 1°C/W Note 1. For either polarity of gate voltage with reference to MT1. Note 2. For either polarity of MT2 voltage with reference to MT1. Electrical Characteristics: (TC = +25°C unless otherwise specified) Parameter Symbol Test Conditions Min Typ Max Unit Peak Forward Blocking Current IDRM TJ = +110°C, VD = 600V, Gate Open, Note 2 – 0.75 4.0 mA VD = 12V, RL = 33Ω, Pulse Duration > 20µs, Note 1 1 – 50 mA 1 – 75 mA – – 2.5 V 0.2 – – V VD = 12V, IT = 1A, Gate Open, Note 2 – 30 80 mA ITM = 60A, tp = 10ms, Note 2 – – 1.6 V VD = 600V, ITM = 40A, IG = 1A, diG/dt = 10A/µs, Note 1 – 2.5 – µs VD = 600V, Gate Open, TJ = +110°C, Note 2 50 150 – V/µs – 5 – V/µs Gate Trigger Current Quadrant I, II, III IGT Quadrant IV Gate Trigger Voltage VGT VD = 12V, RL = 33Ω, Pulse Duration > 20µs, Note 1 Gate Non–Trigger Voltage VGD VD = 600V, TJ = +110°C, RL = 3k, Pulse Duration > 20µs, Note 1 Holding Current IH Peak On–State Voltage VTM Gate Controlled Turn–On Time tgt Critical Rate of Rise of Off–State Voltage dv/dt Critical Rate of Rise of Commutation Voltage dv/dt(c) VD = 600V, ITM = 40A, TC = +60°C Commutating di/dt = 18A/ms, Note 2 Note 1. For either polarity of gate voltage with reference to MT1. Note 2. For either polarity of MT2 voltage with reference to MT1. .600 (15.24) .060 (1.52) .173 (4.4) MT2 .156 (3.96) Dia. MT1 MT2 .550 (13.97) .430 (10.92) Gate .500 (12.7) Min .055 (1.4) .015 (0.39) .215 (5.45) NOTE: Dotted line indicates that case may have square corners.