NTE56042 thru NTE56044
TRIAC, 16A, Sensitive Gate
Description:
The NTE56042 through NTE56044 are glass passivated, sensitive gate TRIACs in an isolated full–
pack type package designed for use in general purpose bidirectional switching and phase control
applications, where high sensitivity is required in all four quadrants.
Absolute Maximum Ratings:
Repetitive Peak Off–Sate Voltage, VDRM
NTE56042 (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 500V
NTE56043 (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 600V
NTE56044 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 800V
RMS On–State Current (Full Sine Wave, THS ≤ 38°C), IT(RMS) . . . . . . . . . . . . . . . . . . . . . . . . . . 16A
Non–Repetitive Peak On–State Current, ITSM
(Full Sine Wave, TJ = +125°C prior to Surge, with Reapplied VDRMmax)
t = 20ms . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 140A
t = 16.7ms . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 150A
2
I t for Fusing (t = 10ms), I2t . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 98A2sec
Repetitive Rate–of–Rise of On–State Current after Triggering, dIT/dt
(ITM = 20A, IG = 0.2A, dIG/dt = 0.2A/µs)
MT2 (+), G (+) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50A/µs
MT2 (+), G (–) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50A/µs
MT2 (–), G (–) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50A/µs
MT2 (–), G (+) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10A/µs
Peak Gate Current, IGM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2A
Peak Gate Voltage, VGM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5V
Peak Gate Power, PGM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5W
Average Gate Power (Over Any 20ms Period), PG(AV) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 500mW
Operating Junction Temperature, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +125°C
Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –40° to +150°C
Thermal Resistance, Junction–to–Heatsink (Full or Half Cycle), RthJHS
With Heatsink Compound . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4.0K/W
Without Heatsink Compound . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5.5K/W
Typical Thermal Resistance, Junction–to–Ambient, RthJA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 55K/W
Note 1. Although not recommended, off–state voltages up to 800V may be applied without damage,
but the TRIAC may switch to the on–state. The rate–of–rise of current should not exceed
15A/µs.
Electrical Characteristics: (TJ = +25°C unless otherwise specfied)
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
–
2.5
10
mA
MT2 (+), G (–)
–
4.0
10
mA
MT2 (–), G (–)
–
5.0
10
mA
MT2 (–), G (+)
–
11
25
mA
–
3.2
30
mA
MT2 (+), G (–)
–
16
40
mA
MT2 (–), G (–)
–
4.0
30
mA
MT2 (–), G (+)
–
5.5
40
mA
Static Characteristics
Gate Trigger Current
MT2 (+), G (+)
IGT
Latching Current
MT2 (+), G (+)
VD = 12V, IT = 0.1A
IL
VD = 12V, IT = 0.1A
Holding Current
IH
VD = 12V, IT = 0.1A
–
4.0
30
mA
On–State Voltage
VT
IT = 20A
–
1.2
1.6
V
VD = 12V, IT = 0.1A
–
0.7
1.5
V
0.25
0.4
–
V
VD = VDRMmax, TJ = +125°C
–
0.1
0.5
mA
dVD/dt
VDM = 67% VDRMmax, TJ = +125°C,
Exponential Waveform, Gate Open
–
50
–
V/µs
tgt
ITM = 20A, VD = VDRMmax, IG = 0.1A,
dIG/dt = 5A/µs
–
2
–
µs
Gate Trigger Voltage
VGT
VD = 400V, IT = 0.1A, TJ = +125°C
Off–State Leakage Current
ID
Dynamic Characteristics
Critical Rate–of–Rise of
Off–State Voltage
Gate Controlled Turn–On Time
Isolation Characteristics (Ths = +25°C unless otherwise specified)
RMS Isolation Voltage from All
3 Pins to External Heatsink
VISOL
R.H. ≤ 65%, Clean and Dustfree
–
–
1500
V
Capacitance from T2 to
External Heatsink
CISOL
f = 1MHz
–
12
–
pF
.402 (10.2) Max
.224 (5.7) Max
.122 (3.1)
Dia
.295
(7.5)
.669
(17.0)
Max
.165
(4.2)
MT1 MT2 G
.531
(13.5)
Min
.100 (2.54)
.059 (1.5) Max
.173 (4.4)
Max
.114 (2.9)
Max
