NTE56071

NTE56070 & NTE56071 TRIAC, 25A, High Commutation Description: The NTE56070 and NTE56071 are glass passivated, high commutation TRIACs in a TO220 type package designed for use in circuits where high static and dynamic dV/dt and high dI/dt can occur. These devices will commutate the full rated RMS current at the maximum rated junction temperature, without the aid of a snubber. Absolute Maximum Ratings: Repetitive Peak Off–Sate Voltage (Note 1), VDRM NTE56070 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 600V NTE56071 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 800V RMS On–State Current (Full Sine Wave, TMB ≤ 91°C), IT(RMS) . . . . . . . . . . . . . . . . . . . . . . . . . . 25A Non–Repetitive Peak On–State Current, ITSM (Full Sine Wave, TJ = +25°C prior to Surge) t = 20ms . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 190A t = 16.7ms . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 209A I2t for Fusing (t = 10ms), I2t . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 180A2sec Repetitive Rate–of–Rise of On–State Current after Triggering, dIT/dt (ITM = 30A, IG = 0.2A, dIG/dt = 0.2A/µs) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100A/µs Peak Gate Current, IGM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2A Peak Gate Voltage, VGM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5V Peak Gate Power, PGM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5W Average Gate Power (Over Any 20ms Period), PG(AV) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 500mW Operating Junction Temperature, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +125°C Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –40° to +150°C Thermal Resistance, Junction–to–Mounting Base, RthJMB Full Cycle . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.0K/W Half Cycle . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.4K/W Typical Thermal Resistance, Junction–to–Ambient, RthJA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 60K/W Note 1. Although not recommended, off–state voltages up to 800V may be applied without damage, but the TRIAC may switch to the on–state. The rate–of–rise of current should not exceed 15A/µs. Electrical Characteristics: (TJ = +25°C unless otherwise specfied) Parameter Symbol Test Conditions Min Typ Max Unit 2 18 50 mA MT2 (+), G (–) 2 21 50 mA MT2 (–), G (–) 2 34 50 mA – 31 60 mA MT2 (+), G (–) – 34 90 mA MT2 (–), G (–) – 30 60 mA Static Characteristics Gate Trigger Current MT2 (+), G (+) IGT Latching Current MT2 (+), G (+) IL VD = 12V, IT = 0.1A, Note 2 VD = 12V, IT = 0.1A Holding Current IH VD = 12V, IT = 0.1A – 31 60 mA On–State Voltage VT IT = 30A – 1.3 1.55 V VD = 12V, IT = 0.1A – 0.7 1.5 V 0.25 0.4 – V – 0.1 0.5 mA 1000 4000 – V/µs Gate Trigger Voltage VGT VD = 400V, IT = 0.1A, TJ = +125°C Off–State Leakage Current ID VD = VDRMmax, TJ = +125°C Dynamic Characteristics Critical Rate–of–Rise of Off–State Voltage dVD/dt VDM = 67% VDRMmax, TJ = +125°C, Exponential Waveform, Gate Open Critical Rate–of–Change of Commutating Current dIcom/dt VDM = 400V, TJ = +125°C, ITRMS = 25A, without Snubber, Gate Open – 44 – A/ms ITM = 12A, VD = VDRMmax, IG = 0.1A, dIG/dt = 5A/µs – 2 – µs Gate Controlled Turn–On Time tgt Note 2. Device does not trigger in the MT2 (–), G (+) quadrant. .420 (10.67) Max .110 (2.79) MT2 .147 (3.75) Dia Max .500 (12.7) Max .250 (6.35) Max .070 (1.78) Max .500 (12.7) Min MT1 Gate .100 (2.54) MT2