NTE5620

NTE5620 TRIAC 800VRM, 8A, TO220 Full Pack The NTE5620 TRIAC is designed primarily for full−wave AC control applications, such as light dimmers, heater controls, motor controls, and power supplies; or wherever full wave silicon gate controlled solid state devices are needed. TRIAC type thyristors switch from a blocking to a conducting state for either polarity of applied voltage with positive or negative gate triggering. Features: D D D D Blocking Voltage − 800 Volts All Diffused and Glass Passivated Junctions for Greater Parameter Uniformity and Stability Small, Rugged, TO220 Full Pack for Low Thermal Resistance, High Heat Dissipation, and Durability Gate Triggering Guaranteed in Four Modes Absolute Maximum Ratings: Peak Repetitive Off−State Voltage, VDRM (TJ = −40 to +125C, 1/2 Sine Wave 50 to 60HZ, Gate Open, Note 1) . . . . . . . . . . . . . . 800V On−State Current RMS, IT(RMS) (TC = +80C, Full Cycle Sine Wave 50 to 60HZ, Note 2 ) . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8A Peak Non−Repetitive Surge Current, ITSM (One Full Cycle, 60Hz, TC = +125C, Preceded and followed by rated current) . . . . . . 100A Peak Gate Power (TC = +80C, Pulse Width = 2s), PGM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16W Average Gate Power (TC = +80C, t = 8.3ms), PG(AV) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 350mW Peak Gate Current (Pulse Width = 2s), IGM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4A RMS Isolation Voltage (TA = +25C, Relative Humidity  20%), V(ISO) . . . . . . . . . . . . . . . . . . . 1500V Operating Junction Temperature Range, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −40 to +125C Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −40 to +150C Thermal Resistance, Junction−to−Case, RthJC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2.2C/W Typical Thermal Resistance, Case−to−Sink, RthCS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2.2C/W Thermal Resistance, Junction−to−Ambient, RthJA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 60C/W Note 1. Ratings apply for open gate conditions. Thyristor devices shall not be tested with a constant current source for blocking capability such that the voltage applied exceeds the rated blocking voltage. Note 2. The case temperature reference point for all TC measurements is a point on the center lead of the package as close as possible to the plastic body. Rev. 4−16 Electrical Characteristics: (TC = +25C unless otherwise specified) Symbol Min Typ Max Unit Peak Blocking Current (Either Direction) (Rated VDRM, TJ = +125C, Gate Open) IDRM − − 2 mA Peak On−State Voltage (Either Direction) (ITM = 11.3A Peak; Pulse Width = 1 to 2ms, Duty Cycle < 2%) VTM − 1.7 2.0 V Peak Gate Trigger Current (Main Terminal Voltage = 12Vdc, RL = 100 Ohms) MT2(+), G(+) MT2(+), G(−) MT2(−), G(−) MT2(−), G(+) IGT Peak Gate Trigger Voltage (Main Terminal Voltage = 12Vdc, RL = 100 Ohms) MT2(+), G(+) MT2(+), G(−) MT2(−), G(−) MT2(−), G(+) (Main Terminal Voltage = Rated VDRM, RL = 10k, TJ = +125C) MT2(+), G(+); MT2(+), G(−); MT2(−), G(−) MT2(−), G(+) VGT Characteristics Holding Current (Either Direction) (Main Terminal Voltage = 24Vdc, Gate Open IT = 200mA) Critical Rate of Rise of Off−State Voltage (Rated VDRM, Exponential Waveform, TJ = +125C, Gate Open) Critical Rate of Rise of Commutation Voltage (Rated VDRM, IT(RMS) = 6A, Commutating di/dt = 4.3A/ms, Gate Unenergized, TC = +80C) mA − − − − − − − − 50 50 50 75 V − − − − 0.9 0.9 1.1 1.4 2.0 2.0 2.0 2.5 0.2 0.2 − − − − IH − − 50 mA dv/dt − 100 − V/s dv/dt(c) − 5 − V/s MT2 MT1 Gate .177 (4.5) .409 (10.4) Max .102 (2.6) .276 (7.0) Isol .630 (16.0) .636 (16.2) MT1 .500 (12.7) Min MT2 Gate .402 (10.2) .100 (2.54) .102 (2.6)