NTE5623

NTE5621 thru NTE5627 TRIAC – 10 Amp Description: The NTE5621 through NTE5627 TRIACs are designed primarily for full–wave AC control applications, such as light dimmers, motor controls, heating controls, and power supplies; or wherever full– wave silicon gate controlled solid–state devices are needed. TRIAC type thyristors switch from a blocking to a conducting state for either polarity of applied anode voltage with positive or negative gate triggering. Features: D All Diffused and Passivated Junctions for Greater Parameter Uniformity and Stability D Small, Rugged, Thermopad Construction for Low Thermal Resistance, High Heat Dissipation and Durability. D Gate Triggering Guaranteed in Two Modes Absolute Maximum Ratings: Repetitive Peak Off–State Voltage (TJ = +100°C, Note 2), VDRM NTE5621 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25V NTE5622 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50V NTE5623 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100V NTE5627 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 500V On–State Current RMS (TC = +75°C), IT(RMS) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10A Peak Surge Current (One Full Cycle, 60Hz, TJ = –40° to +100°C), ITSM . . . . . . . . . . . . . . . . . . 100A Circuit Fusing Considerations (TJ = –40° to +100°C, t = 1.0 to 8.3ms), I2t . . . . . . . . . . . . . . . . 40A2s Peak Gate Power, PGM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10W Average Gate Power, PG(AV) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.5W Peak Gate Current, IGM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2A Operating Junction Temperature Range, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –40° to +100°C Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –40° to +150°C Mounting Torque (6–32 Screw, Note 3) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12in. lb. Thermal Resistance, Junction–to–Case, RthJC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2°C/W Thermal Resistance, Case–to–Ambient, RthJA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50°C/W Note 1. NTE5622 and NTE5627 are discontinued devices and no longer available. Note 2. Ratings apply for open gate conditions. Thyristor devices shall not be tested with a constant current source for blocking capability such that the voltage applied exceeds the rated blocking voltage. Note 3. Torque rating applies with use of torque washer. Mounting torque in excess of 8 in. lbs. does not appreciably lower case–to–sink thermal resistance. Anode lead and heatsink contact pad are common. Note 4. For soldering purposes (either terminal connection or device mounting), soldering temperatures shall not exceed +230°C. Electrical Characteristics: (TC = +25°C unless otherwise specified) Parameter Symbol Peak Blocking Current (Either Direction) (Rated VDRM, TJ = 100°C, Gate Open) IDRM On–State Voltage (Either Direction) (ITM = 14A Peak) VTM Gate Trigger Current (Continuous DC) (Main Terminal Voltage = 12V, RL = 100Ω) MT2 (+), G (+); MT2 (–), G (–) IGT Gate Trigger Voltage (Continuous DC) (Main Terminal Voltage = 12V, RL = 100Ω) MT2 (+), G (+); MT2 (–), G (–) VGT Gate Trigger Voltage (Continuous DC – All Modes) (Main Terminal Voltage = Rated VDRM, RL = 100Ω, TJ = +100°C) VGD IH Turn–On Time (ITM = 14A, IGT = 100mA) ton Blocking Voltage Application Rate at Commutation (At VDRM, TJ = +75°C, Gate Open) .143 (3.65) Dia Thru .668 (17.0) Max MT1 Max Unit – – 2 – 1.3 1.8 mA V mA – 50 V – 0.9 2.0 0.2 – – V mA – – 50 – 1.5 – – 5 – µs dv/dt .530 (13.4) Max Gate .655 (16.6) Max .166 (4.23) Typ – Holding Current (Either Direction) (Main Terminal Voltage = 12Vdc, Gate Open, IT = 100mA) Heat Sink Contact Area (Bottom) Min MT2 (Heat Sink Area) .150 (3.82) Max V/µs