NTE5629

NTE5629 TRIAC – 400VRM, 4Amp Description: The NTE5629 TRIAC is a bi–directional triode thyristor in a TO202 type case. This device may be switched from off–state to conduction for either polarity of applied voltage with positive or negative gate–trigger current. The NTE5629 can be driven directly with IC and MOS devices and is designed for control applications in lighting, heating, cooling, and static switching relays. Absolute Maximum Ratings: Repetitive Peak Off–State Voltage (Gate Open, TJ = +110°C, Note 1), VDRM . . . . . . . . . . . . . . 400V RMS On–State Current (TC = +80°C, Conduction Angle = 360°), IT(RMS) . . . . . . . . . . . . . . . . . . . 4A Non–Repetitive Peak Surge On–State Current (One–Cycle, at 50Hz or 60Hz), ITSM . . . . . . . . 40A Peak Gate–Trigger Current (for 3µs Max), IGTM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.2A Peak Gate–Power Dissipation (IGT ≤ IGTM), PGM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15W Average Gate–Power Dissipation, PG(AV) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3W Operating Temperature Range, Topr . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –40° to +110°C Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –40° to +150°C Thermal Resistance, Junction–to–Case, RthJC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4°C/W Typ Electrical Characteristics: (At Specified Case Temperature) Peak Off–State Current (Gate Open, TC = +110°C, VDRM = 400V, Note 1), IDRM . . . . . 0.5mA Max Maximum On–State Voltage (TC = +25°C, IT = 4A, Note 1), VTM . . . . . . . . . . . . . . . . . . . . . 1.6V Max DC Holding Current (Gate Open, TC = +25°C, Note 1), IHold . . . . . . . . . . . . . . . . . . . . . . . . 5mA Max Critical Rate–of–Rise of Off–State Voltage, Critical dv/dt (VD = 400V, Gate Open, TC = +110°C, Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10V/µs Critical rate–of–Rise of commutation Voltage, Commutating dv/dt (VD = 400V, IT = 4A, Gate Unenergized, TC = +80°C, Note 1) . . . . . . . . . . . . . . . . . . . . 1V/µs DC Gate–Trigger Current (VD = 12VDC, RL = 60Ω, TC = +25°C), IGT . . . . . . . . . . . . . . . . . 3mA Max (T2+ Gate +, T2– Gate –) Quads I and III (T2+ Gate –, T2– Gate +) Quads II and IV DC Gate–Trigger Voltage (VD = 12VDC, RL = 60Ω, TC = +25°C), VGT . . . . . . . . . . . . . . . . . . 2V Max Gate–Controlled Turn–On Time, Tgt (VD = 400V, IGT = 80mA, tR = 0.1µs, IT = 6A (Peak), TC = +25°C) . . . . . . . . . . . . . . . . . . . 3µs Note 1. All values apply in either direction. .380 (9.56) .180 (4.57) .132 (3.35) Dia MT2 .500 (12.7) .325 (9.52) 1.200 (30.48) Ref .070 (1.78) x 45° Chamf .300 (7.62) .050 (1.27) MT2 .400 (10.16) Min MT1 .100 (2.54) Gate .100 (2.54)