NTE5638

NTE5638, NTE5638−06, NTE5638−08 TRIAC − 8A Isolated Tab Description: The NTE5638 is an 8 Amp TRIAC in a TO220 type package designed to be driven directly with IC and MOS devices and features proprietary, void−free glass passivated chips. This device is a bi−directional triode thyristor and may be switched from off−state to conduction for either polarity of applied voltage with positive or negative gate trigger current. The NTE5638 is designed for control applications in lighting, heating, cooling and static switching relays. Absolute Maximum Ratings: Repetitive Peak Off−State Voltage (Gate Open, TJ = +110°C, Note 1), VDRM NTE5638 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 400V NTE5638−06 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 600V NTE5638−08 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 800V RMS On−State Current (TC = +80°C, Conduction Angle of 360°C), IT(RMS) . . . . . . . . . . . . . . . . . . 8A Peak Surge (Non−Repetitive) On−State Current (One Cycle, 50Hz or 60Hz), ITSM . . . . . . . . . . 80A Peak Gate−Trigger Current (3µs Max), IGTM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2A Peak Gate−Power Dissipation (IGT ≤ IGTM for 3µs Max), PGM . . . . . . . . . . . . . . . . . . . . . . . . . . . 20W Average Gate−Power Dissipation, PG(AV) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 200mW Operating Temperature Range, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −40° to +150°C Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −40° to +110°C Typical Thermal Resistance, Junction−to−Case, RthJC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2.5°C/W Note 1. All values apply in either direction. Electrical Characteristics: (TC = +25°C, Maximum Ratings unless otherwise specified) Parameter Symbol Test Conditions Peak Off−State Current IDRM VDRM = Max, Gate Open, TJ = +110°C − − 0.5 mA Max. On−State Voltage VTM IT = 8A − − 1.6 V Gate Open, Note 1 − − 25 mA VD = VDRM, Gate Open, TC = +100°C, Note 1 − 30 − V/µs − 2 − V/µs − − 10 mA DC Holding Current Critical Rate−of−Rise of Off−State Voltage Critical Rate−of−Rise of Commutation Voltage DC Gate Trigger Current T2 (+) Gate (+), T2 (−) Gate (−) T2 (+) Gate (−), T2 (−) Gate (+) IH Critical dv/dt Commutation VD = VDRM, IT = 8A, TC = +80°C, dv/dt Gate Unenergized, Note 1 IGT Note 1. All values apply in either direction. VD = 12V, RL = 60Ω Min Typ Max Unit Electrical Characteristics (Cont’d): (TC = +25°C, Maximum Ratings unless otherwise specified) Parameter Symbol DC Gate Trigger Voltage VGT Gate−Controlled Turn−On Time tgt Test Conditions VD = 12V, RL = 60Ω − − 2.2 V VD = VDRM, IGT = 80mA, tr = 0.1µs, iT = 10A (Peak) − 2.2 − µs .420 (10.67) Max .110 (2.79) Isolated .147 (3.75) Dia Max .500 (12.7) Max .250 (6.35) Max .500 (12.7) Min .070 (1.78) Max MT1 .100 (2.54) Min Typ Max Unit Gate MT2