NTE5650

NTE5650 thru NTE5653 TRIAC – 100VRM, 2.5A Description: The NTE5650 through NTE5653 sensitive gate TRIACs are designed to be driven directly with IC and MOS devices. These devices features a void–free glass passivated chip and are hermetically sealed in TO–5 outline cans. The NTE5650 through NTE5653 are bi–directional triode thyristors and may be switched from off– state to conduction for either polarity of applied voltage with positive or negative gate–trigger current and are designed for control applications in lighting, heating, cooling and static switching relays. Absolute Maximum Ratings: Repetitive Peak Off–State Voltage (TJ = +90°C, Gate Open, Note 1), VDROM NTE5650 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100V NTE5651 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 200V NTE5652 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 400V NTE5653 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 600V RMS On–State Current (TC = +75°C and Conduction Angle of 360°), IT(RMS) . . . . . . . . . . . . . . . 3A Peak Surge (Non–Repetitive) On–State Current (One–Cycleat 50Hz or 60Hz), ITSM . . . . . . . . 30A Peak Gate–Trigger Current (3µsec, Max.), IGTM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1A Peak Gate–Power Dissipation (IGT ≤ IGTM for 3µsec. Max.), PGM . . . . . . . . . . . . . . . . . . . . . . . . 20W Average Gate–Power Dissipation, PG(AV) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.2W Operating Temperature Range (TC), Topr . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –40° to +90°C Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –40° to +150°C Typical Thermal Resistance, Junction–to–Case, RthJC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4°C/W Note 1. All values apply in either direction. Electrical Characteristics: (At Maximum Ratings & Specified Case Temperature) Parameter Peak Off–State Current Symbol Test Conditions Min Typ Max Unit IDROM TJ = +90°C, VDROM = Max Rating, Gate Open, Note 1 – – 0.75 mA Maximum On–State Voltage VTM TC = +25°C, iT = 5A (Peak), Note 1 – – 1.85 V DC Holding Current IHO TC = +25°C, Gate Open – – 5 mA TC = +90°C, vD = VDROM, Gate Open, Note 1 – 3 – V/µs TC = + 25°C, vD = 6V, RL = 39Ω – – 3 mA Critical Rate–of–Rise of Off–State Voltage DC Gate–Trigger Current MT2 (+) Gate (+), MT2 (–) Gate (–) Critical dv/dt IGT MT2 (+) Gate (–), MT2 (–) Gate (+) Note 1. All values apply in either direction. Electrical Characteristics (Cont’d): (At Maximum Ratings & Specified Case Temperature) Parameter Symbol DC Gate Trigger Voltage VGT Test Conditions Min Typ Max Unit TC = +25°C, vD = 6V, RL = 39Ω – – 2.2 V Gate–Controlled Turn–On Time tgt TC = +25°C, vD = VDROM, IGT = 80mA, tr = 0.1µs, iT = 10A (Peak) – 2.2 – µs Fusing Current (For TRIAC Protection) I2t T = 1.25 to 10ms – – 3 A2s .352 (8.95) Dia Max .320 (98.13) Dia Max .250 (6.35) Max 1.500 (38.1) Min .019 (0.5) Dia Gate MT1 MT2 45° .031 (.793) TO5