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NTE5676

NTE5676

  • 厂商:

    NTE

  • 封装:

    TO-208AA

  • 描述:

    TRIAC 500V 15A TO48

  • 数据手册
  • 价格&库存
NTE5676 数据手册
NTE5673 thru NTE5677 TRIAC – 15 Amp Description: The NTE5673 through NTE5677 series of meduim power TRIACs are bidirectional triode thyristors which may be switched from off–state to conduction for either polarity od applied voltage with positive or negative gate triggering. These devices are designed for control of AC loads in applications such as lighting, heating, and motor speed control as well as static switching relays. Absolute Maximum Ratings: Repetitive Peak Off–State Voltage and peak Reverse Voltage (TJ = +100°C), VDRM, VRRM NTE5673 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 200V NTE5675 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 400V NTE5676 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 500V NTE5677 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 600V On–State Current RMS (TC = +75°C, 360° Conduction), IT(RMS) . . . . . . . . . . . . . . . . . . . . . . . . . . 15A Peak Surge (Non–Repetitive) On–State Current (One Full Cycle, 50 or 60Hz), ITSM . . . . . . . . 150A Peak Gate–Power Dissipation (IGT ≤ IGTM for 3µs Max), PGM . . . . . . . . . . . . . . . . . . . . . . . . . . . 20W Average Gate–Power Dissipation, PG(AV) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.5W Peak Gate–Trigger Current (3µs Max), IGTM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2A Operating Junction Temperature Range (TJ), Topr . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –40° to +100°C Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –40° to +150°C Thermal Resistance, Junction–to–Case, RthJC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.8°C/W Electrical Characteristics: (TC = +25°C unless otherwise specified) Parameter Peak Off–State Current (Ir = 100A Peak) Symbol VT DC Gate Trigger Current (Main Terminal Voltage = 24V, RL = 12Ω) MT2 (+), G (+); MT2 (–), G (–) Quads I – III MT2 (+), G (–); MT2 (–), G (+) Quads II – IV IGT DC Gate Trigger Voltage (Main Terminal Voltage = 24V, RL = 12Ω) VGT DC Holding Current (Gate Open) IH Gate Controlled Turn–On Time (VD = VDROM, IT = 10A Peak, IGT = 300mA, tr = 0.1µs) tgt Critical Rate–of–Rise of Commutation (VD = VDROM, If = IT(RMS), TC = +100°C, Gate Open) Typ Max Unit – – 2 – – 2.2 IDROM Maximum On–State Voltage (Ir = 100A Peak) Critical Rate–of–Rise of Off–State Voltage (VD = VDROM, TC = +100°C, Gate Open) Min Critical dv/dt Commutating dv/dt mA V mA – – – – 50 80 – – 2.5 – – 60 – 3.0 – – 40 – V mA µs V/µs V/µs – 5 – .562 (14.28) Max Gate MT1 .1.193 (30.33) Max .200 (5.08) Max .453 (111.5) Max MT2 1/4–28 UNF–2A
NTE5676 价格&库存

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