NTE5690

NTE5688, NTE5689, NTE5690 TRIAC - 40Amp, 1/2” Press Fit Absolute Maximum Ratings: Repetitive Peak Off-State Voltage (Gate Open, TJ = +110°C, Note 1), VDRM NTE5688 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 200V NTE5689 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 400V NTE5690 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 600V RMS On-State Current (TC = +80°C, Conduction Angle = 360°), IT(RMS) . . . . . . . . . . . . . . . . . . . 40A Non-Repetitive Peak Surge On-State Current (One-Cycle, at 50Hz or 60Hz), ITSM . . . . . . . . 400A Peak Gate-Trigger Current (for 3μs Max), IGTM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12A Peak Gate-Power Dissipation (IGT ≤ IGTM), PGM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 40W Average Gate-Power Dissipation, PG(AV) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 750mW Operating Temperature Range, Topr . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -40° to +110°C Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -40° to +150°C Thermal Resistance, Junction-to-Case, RthJC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.8°C/W Typ Electrical Characteristics: (At Specified Case Temperature) Peak Off-State Current, IDRM (Gate Open, TC = +110°C, VDRM = Max Rating, Note 1) . . . . . . . . . . . . . . . . . . . . . . 1mA Max Maximum On-State Voltage (TC = +25°C, IT = 40A, Note 1), VTM . . . . . . . . . . . . . . . . . . . . 2.0V Max DC Holding Current (Gate Open, TC = +25°C, Note 1), IHold . . . . . . . . . . . . . . . . . . . . . . . 60mA Max Critical Rate-of-Rise of Off-State Voltage, Critical dv/dt (VD = VDRM, Gate Open, TC = +110°C, Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 200V/μs Critical rate-of-Rise of commutation Voltage, Commutating dv/dt (VD = VDRM, IT = 40A, Gate Unenergized, TC = +80°C, Note 1) . . . . . . . . . . . . . . . . . . . 3V/μs DC Gate-Trigger Current (VD = 12VDC, RL = 30Ω, TC = +25°C), IGT (T2+ Gate +, T2- Gate -) Quads I and III . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100mA Max (T2+ Gate -, T2- Gate +) Quads II and IV . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 150mA Max DC Gate-Trigger Voltage (VD = 12VDC, RL = 30Ω, TC = +25°C), VGT . . . . . . . . . . . . . . . . 2.5V Max Gate-Controlled Turn-On Time, Tgt (VD = 400V, IGT = 200mA, tR = 0.1μs, IT = 10A (Peak), TC = +25°C) . . . . . . . . . . . . . . . . . 3μs Note 1. All values apply in either direction. Gate MT1 MT2 .610 (15.49) Max .650 (16.5) Max .385 (9.76) Max .508 (12.9) Max