NTE5827

NTE5826 & NTE5827 Power Rectifier Diode, Glass Passivated, 50 Amp, Press Fit Features: D Glass Passivated Die Construction D Low Leakage D High Surge Current Capability D Typical IR less than 5A D Rugged Construction D Available in Standard (NTE5826) and Reverse (NTE5827) Polarity Absolute Maximum Ratings: (TA = +25C unless otherwise specified. Single phase, half wave, 60Hz, resistive or inductive load. For capacitive load, derate current by 20%) Peak Repetitive Reverse Voltage, VRRM NTE5826, NTE5827* . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 400V Working Peak Reverse Voltage, VRWM NTE5826, NTE5827* . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 400V DC Blocking Voltage, VR NTE5826, NTE5827* . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 400V RMS Reverse Voltage, VR(RMS) NTE5826, NTE5827* . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 280V Average Rectified Forward Current (TC = +150C), IO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50A Non−Repetitive Peak Surge Current, IFSM (8.3ms Single half Sine−Wave Superimposed on Rated Load) . . . . . . . . . . . . . . . . . . . . 500A Forward Voltage (IF = 50A), VFM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.0V Peak Reverse Current (VR = 400V), IRM TA = +25C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5.0A TA = +100C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 500A Typical Junction Capacitance (Note 2), CJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 400pF Operating Junction Temperature Range, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −65 to +175C Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −65 to +175C Maximum Thermal Resistance, Junction−to−Case (Note 3), RthJC . . . . . . . . . . . . . . . . . . . . 1.0C/W Note 1. Standard polarity is cathode to case, (*) indicated anode to case. Note 2. Measured at 1.0MHz and applied reverse voltage of 4.0VDC. Note 3. Thermal Resistance: Junction−to−case, single side cooled. Rev. 7−19 .501 (12.73) Dia Min .505 (12.82) Dia Max .276 (7.0) Max .433 (11.0) Max Seating Plane .455 (11.55) Min .099 (2.52) Dia Max .631 (16.03) Dia Max