NTE583

NTE583 Silicon Rectifier Diode Schottky, RF Switch DO−35 Type Package Description: The NTE583 is a metal to silicon junction diode featuring high breakdown, low turn−on voltage and ultrafast switching. This device is primarily intended for high level UHF/VHF detection and pulse application with broad dynamic range. Absolute Maximum Ratings: (TA = +25C, Limiting Values) Repetitive Peak Reverse Voltage, VRRM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 70V Forward Continuous Current (Figure 1), IF . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15mA Surge Non−Repetitive Forward Current (tp  1s, Figure 1), IFSM . . . . . . . . . . . . . . . . . . . . . . . . 50mA Operating Junction Temperature Range, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −65 to +200C Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −65 to +200C Thermal Resistance, Junction−to−Ambient (Figure 1), RthJA . . . . . . . . . . . . . . . . . . . . . . . +400C/W Figure 1 d d ÇÇÇÇÇÇ ÇÇÇÇÇÇ ÇÇÇÇÇÇ ÇÇÇÇÇÇ ÇÇÇÇÇÇ ÇÇÇÇÇÇ ÇÇÇÇÇÇ ÇÇÇÇÇÇ * d = 4mm ÇÇÇÇÇÇ ÇÇÇÇÇÇ ÇÇÇÇÇÇ ÇÇÇÇÇÇ ÇÇÇÇÇÇ ÇÇÇÇÇÇ ÇÇÇÇÇÇ ÇÇÇÇÇÇ Infinite heat sinks Rev. 8−17 Electrical Characteristics: (TA = +25C unless otherwise specified) Symbol Parameter Test Conditions Min Typ Max Units Static Characteristics Breakdown Voltage V(BR) IR = 10A 70 − − V Continuous Forward Voltage VF(1) IF = 1mA − − 0.41 V IF = 15mA − − 1 V VR = 50V − − 0.2 A Continuous Reverse Current IR(1) Dynamic Characteristics Small Signal Capacitance C VR = 0, f = 1MHZ − − 2 pF Minority Carrier Life Time  IF = 5mA, Krakauer Method − − 100 ps Note 1. Pulse Test tp  300s   2% 1.000 (25.4) Min .200 (5.08) Max .022 (.509) Dia Max Color Band Denotes Cathode .090 (2.28) Dia Max