NTE584

NTE584 Silicon Schottky Diode Description: The NTE584 is a metal to silicon junction diode in a DO35 type package featuring high breakdown, low turn–on voltage and ultrafast switching primarily intended for high level UHF/VHF detection and pulse application with broad dynamic range. Absolute Maximum Ratings: (Limiting Values) Repetitive Peak Reverse Voltage, VRRM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20V Forward Continuous Current (TA = +25°C, Note 1), IF . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 35mA Surge Non–Repetitive Forward Current (tp ≤ 1s, Note 1), IFSM . . . . . . . . . . . . . . . . . . . . . . . . . 100mA Operating Junction Temperature Range, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –65° to +200°C Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –65° to +200°C Maximum Lead Temperature (During Soldering, 10s at 4mm from Case), TL . . . . . . . . . . . . +230°C Thermal Resistance, Junction–to–Ambient (Note 1), RΘJA . . . . . . . . . . . . . . . . . . . . . . . . . . 400°C/W Note 1. On infinite heat sink with 4mm lead length. Electrical Characteristics: (TA = +25°C unless otherwise specified) Parameter Symbol Test Conditions Min Typ Max Unit IR = 10µA 20 – – V IF = 1mA, Note 2 – – 0.41 V IF = 35mA, Note 2 – – 1.0 V IR VR = 15V, Note 2 – – 0.1 µA Overvoltage Coefficient C VR = 0V, f = 1MHz – – 1.2 pF Minority Carrier Life Time τ IF = 5mA, Krakauer Method – – 100 ps Static Characteristic Breakdown Voltage V(BR) Forward Voltage VF Continuous Reverse Current Dynamic Characteristic Note 2. Pulse Test: Pulse width ≤ 300µs, Duty Cycle < 2%. 1.000 (25.4) Min .200 (5.08) Max .022 (.509) Dia Max Color Band Denotes Cathode .090 (2.28) Dia Max