NTE585

NTE585 Schottky Barrier Diode DO−41 Type Package Features: D Schottky Barrier Chip D Guard Ring for Transient and ESD Protection D Surge Overload Rating to 25A Peak D Lower Power Loss, High Efficiency D Ideally Suited for Use in High Frequency SMPS, Inverters ans As Free Wheeling Diodes Maximum Ratings and Electrical Characteristics: (TA = +25C unless otherwise specified. Single phase, half wave, 60Hz, resistive or inductive load. For capacitive load, derate current by 20%. Maximum Peak Repetitive Reverse Current, VRRM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 40V Maximum Recurrent Peak Reverse Voltage, VRWM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 40V Maximum DC Blocking Voltage, VR . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 40V Maximum RMS Voltage, VR(RMS) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 28V Maximum Average Forward Rectified Current (TL = +90C, Note1), IO . . . . . . . . . . . . . . . . . . . . 1.0A Peak Forward Surge Current, IFSM (8.3ms single half sine−wave superimposed on rated load) . . . . . . . . . . . . . . . . . . . . . . . . 25A Maximum Forward Voltage, VFM at 1.0A DC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.6V at 3.1A DC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.9V Maximum Peak Reverse Current at Rated DC Blocking Voltage, IRM TA = +25C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.0mA TA = +100C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10mA Typical Junction Capacitance (Note 2), CJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 110pF Typical Thermal Resistance, Junction−to−Ambient (Note 3), RthJA . . . . . . . . . . . . . . . . . . . . 50C/W Typical Thermal Resistance, Junction−to−Lead (Note 3), RthJL . . . . . . . . . . . . . . . . . . . . . . . 15C/W Operating Junction Temperature Range TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −65 to +125C Storage Temperature Range Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −65 to +150C Note 1. Leads maintained at ambient temperature at a distance of 9.5mm from the case. Note 2. Measured at 1MHz and applied reverse voltage of 4.0 Volts. Note 3. Vertical PCB mounting with 9.5mn lead on 38 x 38mm copper pad. 1.100 (27.94) Min .210 (5.33) Max .034 (0.87) Dia Max Color Band Denotes Cathode .107 (2.72) Dia Max Rev. 3−15