NTE5929

NTE5844 & NTE5845, NTE5912 thru NTE5933 Silicon Power Rectifier Diode, 20 Amp Description and Features: The NTE5844, NTE5845, and NTE5912 through NTE5933 are low power general purpose rectifier diodes in a DO4 type package designed for battery chargers, converters, power supplies, and machine tool controls. Features: D D D D High Surge Current Capability High Voltage Available Designed for a Wide Range of Applications Available in Anode–to–Case or Cathode–to–Case Style Ratings and Characteristics: Average Forward Current (TC = +140°C Max), IF(AV) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20A Maximum Forward Surge Current (60Hz), IFSM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 400A Fusing Current (60Hz), I2t . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 493A2s Fusing Current, I2pt . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7640A2ps Maximum Reverse Recovery Voltage Range, VRRM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50 to 1200V Voltage Ratings: (TJ = +175°C) NTE Type Number Cathode to Case Anode to Case VRRM–Max Repetitive Peak Reverse Volt. (V) VRSM–Max Non–Repetitive Peak Reverse Voltage (V) VR–Max. Direct Reverse Voltage (V) VR(SR) Minimum Avalanche Voltage (V) IRM–Max Reverse Current Rated VRRM (mA) 5912 5914 5916 5918 5920 5922 5924 5928 5932 5844 5913 5915 5917 5919 5921 5923 5925 5929 5933 5845 50 100 200 300 400 500 600 800 1000 1200 75 150 275 385 500 613 725 950 1200 1400 50 100 200 300 400 50 600 800 1000 1200 – – – – 500 613 725 950 1200 1350 12 12 12 12 12 12 12 12 12 12 Electrical Specifications: Parameter Maximum Average Forward Current Maximum Peak One–Cycle Non–Repetitive Surge Current Symbol IF (AV) IFSM Test Conditions 180° sinusoidal condition, TC = +150°C Max t = 10ms t = 8.3ms t = 10ms t = 8.3ms Maximum I2t for Fusing Maximum I2t for Individual Device Fusing Maximum I2pt Maximum Peak Forward Voltage Maximum Value of Threshold Voltage Maximum Value of Forward Slope Resistance I2pt VFM VM (TO) rt I2t t = 10ms t = 8.3ms t = 10ms t = 8.3ms t = 0.1 to 10ms, No voltage reapplied, Note 1 IFM = 63A, TJ = +25°C TJ = +175°C TJ = +175°C Sinusoidal Half Wave, No voltage reapplied 100% rated voltage reapplied, TJ = +175°C No voltage reapplied, Initial TJ = +175°C 100% rated voltage reapplied Rating 20 400 425 437 462 540 493 765 700 7640 1.23 0.78 7.55 Unit A A A A A A2s A2s A2s A2s A2pt V V mΩ Note 1. I2t for time tx = I2 t S Parameter tx Symbol TJ Tstg RthJC RthCS T wt DC operation Mounting surface flat, smooth and greased Non–lubricated threads Test Conditions Rating –65 to + 175 –65 to + 200 1.6 0.25 Unit °C °C K/W K/W Thermal–Mechanical Specifications: Maximum Operation Junction Temperature Maximum Storage Temperature Maximum Internal Thermal Resistance Junction–to–Case Thermal Resistance, Case–to–Sink Mounting Torque Approximate Weight .437 (11.1) Max 1.2 – 1.5 m•N (10.5 – 13.5) (in•lb) 11 (0.25) g (oz) .250 (6.35) Max .060 (1.52) Dia Min .175 (4.45) Max 10–32 NF–2A .424 (10.8) Dia Max .405 (10.3) Max 1.250 (31.75) Max .453 (11.5) Max