NTE593

NTE593 Silicon Diode, High Speed Switch Description: The NTE593 is a silicon epitaxial high–speed diode in an SOT–23 type surface mount package. This device is intended for high–speed switching in hybrid thick–film circuits. Absolute Maximum Ratings: Continuous Reverse Voltage, VR . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 75V Repetitive Peak Reverse Voltage, VRRM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 85V Non–Repetitive Peak Forward Current (t = 1s), IFSM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 500mA Average Rectified Forward Current (Average over any 20ms period, Note 1), IF(Av) . . . . . . 250mA DC Forward Current (TA ≤ +25°C, Note 2), IF . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 250mA Repetitive Peak Forward Current, IFRM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 250mA Total Power Dissipation (TA ≤ +25°C), Ptot . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 200mW Operating Junction Temperature, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +150°C Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –65° to +150°C Thermal Resistance, Junction–to–Ambient (Note 2), RthJA . . . . . . . . . . . . . . . . . . . . . . . . . . . 430K/W Note 1. Measured under pulse conditions: tp ≤ 0.5ms, IF(AV) = 150mA, t(av) ≤ 1ms, for sinusoidal operation. Note 2. Mounted on a ceramic substrate of .314 (8mm) x .393 (10mm) x .027 (0.7mm). Electrical Characteristics: (TJ = +25°C unless otherwise specified) Parameter Forward Voltage Reverse Current Symbol VF IR Test Conditions Min Typ Max Unit IF = 1mA – – 715 mV IF = 10mA – – 855 mV IF = 50mA – – 1000 mV IF = 150mA – – 1250 mV VR = 75V – – 1 µA VR = 75V, TJ = +150°C – – 50 µA Diode Capacitance Cd VR = 0, f = 1MHz – – 2 pF Reverse Recovery Time (When switched from IF = 30mA to IR = 30mA trr measured at IR = 1mA, RL = 100Ω – – 6 ns Recovery Charge (When switched from IF = 10mA to VR = 5V Qs RL = 100Ω – – 45 pC .016 (0.48) K A .098 (2.5) Max N.C. .037 (0.95) .074 (1.9) .118 (3.0) Max .051 (1.3) .043 (1.1) .007 (0.2)