NTE594

NTE594 Silicon Diode, Bandswitch Description: The NTE594 is a silicon band switching diode in an SOT–23 type surface mount package intended for thick and thin–film circuits. Absolute Maximum Ratings: Continuous Reverse Voltage, VR . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 35V DC Forward Current, IF . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100mA Total Power Dissipation (TA ≤ +25°C), Ptot . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 200mW Operating Junction Temperature, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +125°C Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –55° to +125°C Thermal Resistance, Junction–to–Ambient, RthJA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 430K/W Electrical Characteristics: (TJ = +25°C unless otherwise specified) Parameter Symbol Test Conditions Min Typ Max Unit Forward Voltage VF IF = 100mA – – 1.2 V Reverse Current IR VR = 20V – – 100 nA VR = 20V, TJ = 60°C – – 1 µA Series Resistance rD IF = 5mA – 0.5 0.7 Ω Diode Capacitance Cd VR = 20V, f = 1MHz – 0.8 1.0 pF .016 (0.48) K A .098 (2.5) Max N.C. .037 (0.95) .074 (1.9) .051 (1.3) .118 (3.0) Max .043 (1.1) .007 (0.2)