NTE595

NTE595 Silicon Diode, Dual, Common Cathode, High Speed Description: The NTE595 consists of two silicon diodes in an SOT–23 type surface mount package. The cathodes are common and the device is intended for high–speed switching applications in thick and thin–film circuits. Absolute Maximum Ratings: Continuous Reverse Voltage, VR . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 70V Repetitive Peak Reverse Voltage, VRRM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 70V Non–Repetitive Peak Forward Current (Per device, t = 1s), IFSM . . . . . . . . . . . . . . . . . . . . . . . 500mA Average Rectified Forward Current (Average over any 20ms period, Note 1), IF(Av) . . . . . . 250mA DC Forward Current, IF . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 250mA Repetitive Peak Forward Current, IFRM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 250mA Total Power Dissipation (TA ≤ +25°C), Ptot . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 200mW Operating Junction Temperature, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +175°C Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –65° to +175°C Thermal Resistance, Junction–to–Ambient (Note 2), RthJA . . . . . . . . . . . . . . . . . . . . . . . . . . . 430K/W Note 1. Measured under pulse conditions: tp ≤ 0.5ms, IF(AV) = 150mA, t(av) ≤ 1ms, for sinusoidal operation. Note 2. Mounted on a ceramic substrate of .314 (8mm) x .393 (10mm) x .027 (0.7mm). Electrical Characteristics (Per Diode): (TJ = +25°C unless otherwise specified) Parameter Forward Voltage Reverse Current Symbol VF IR Test Conditions Min Typ Max Unit IF = 1mA – – 715 mV IF = 10mA – – 855 mV IF = 50mA – – 1000 mV IF = 150mA – – 1250 mV VR = 70V – – 5 µA VR = 70V, TJ = +150°C – – 100 µA Diode Capacitance Cd VR = 0, f = 1MHz – – 1.5 pF Forward Recovery Voltage (When switched to IF = 10mA) Vfr tr = 20ns – – 1.75 V Electrical Characteristics (Per Diode): (TJ = +25°C unless otherwise specified) Parameter Symbol Test Conditions Min Typ Max Unit Reverse Recovery Time (When switched from IF = 10mA to IR = 10mA trr measured at IR = 1mA, RL = 100Ω – – 6 ns Recovery Charge (When switched from IF = 10mA to VR = 5V Qs RL = 100Ω – – 45 pC .016 (0.48) K A .098 (2.5) Max A .037 (0.95) .074 (1.9) .118 (3.0) Max .051 (1.3) .043 (1.1) .007 (0.2)