NTE6085

NTE6085 Silicon Dual Schottky Rectifier Description: The NTE6085 is a silicon dual power rectifier in a TO220 type package designed using the Schottky Barrier principle with a platinum barrier metal. Features: D Plastic Package D Metal to Silicon Rectifier, Majority Carrier Conduction D Low Power Loss, High Efficiency D High Current Capability, Low VT D High Surge Capability Applications: D For Use in Low Voltage, High Frequency Inverters, Free Wheeling, and Polarity Protection Absolute Maximum Ratings: Maximum Recurred Peak Reverse Voltage, VRRM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 45V Working Peak Reverse Voltage, VRWM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 31.5V DC Blocking Voltage, VR . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 45V Maximum Average Rectified Forward Current (TC = +105°C), IF(AV) Per Diode . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7.5A Per Device . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15A Peak Forward Surge Current, IFSM (8.3ms, Single Half Sine–Wave Superimposed on Rated Load) . . . . . . . . . . . . . . . . . . . 150A Peak Repetitive Reverse Surge Current (2µs, 1kHz), IFRM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1A Peak Repetitive Reverse Current (2µs, 1kHz), IRRM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.5A Operating Junction Temperature Range, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –65° to +150°C Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –65° to +175°C Voltage Rate of Change (VR = 45V), dv/dt . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1000V/µs Typical Thermal Resistance, Junction–to–Case, RthJC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3°C/W Lead Temperature (During Soldering, .250” (6.35mm) from case, 10sec max), TL . . . . . . . . +250°C Electrical Characteristics (Per Diode Leg): (Note 1) Parameter Instantaneous Forward Voltage Symbol vF Test Conditions iF = 7.5A, TC = +125°C iF = 15A, TC = +125°C iF = 15A, TC = +125°C Instantaneous Reverse Current iR VR = 45V, TC = +125°C VR = 45V, TC = +25°C Min – – – – – Typ – – – – – Max 0.57 0.72 0.84 15 0.1 Unit V V V mA mA Note 1. Pulse Test: Pulse Width = 300µs, Duty Cycle ≤ 2%. .147 (3.75) Dia Max .110 (2.79) .392 (9.95) .185 (4.7) .054 (1.38) .245 (6.22) K .6.08 (15.42) Max .269 (6.83) Max .040 (1.02) A K A .500 (12.7) Min .100 (2.54) .018 (0.48)