NTE60MP

NTE60 (NPN) & NTE61 (PNP) Silicon Complementary Transistors High Power Audio, Disk Head Positioner for Linear Applications Description: The NTE60 (NPN) and NTE61 (PNP) are complementary silicon power transistors in a TO−3 type package designed for high power audio, disk head positioners, and other linear applications. Features: D High Safe Operating Area: 250W @ 50V D For Low Distortion Complementary Designs D High DC Current Gain: hFE = 25 Min @ IC = 5A Absolute Maximum Ratings: Collector−Emitter Voltage, VCEO(sus) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 140V Collector−Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 140V Emitter−Base Voltage, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5V Continuous Collector Current, IC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20A Continuous Base Current, IB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5A Continuous Emitter Current, IE . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25A Total Power Dissipation (TC = +25C), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 250W Derate Above 25C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.43W/C Operating Junction Temperature Range, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −65 to +200C Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −65 to +200C Thermal Resistance, Junction−to−Case, RthJC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.70C/W Lead Temperature (During Soldering, 1/16” from Case, 10sec Max), TL . . . . . . . . . . . . . . . . +265C Note 1. Matched complementary pairs are available upon request (NTE61MCP). Matched complementary pairs have their gain specification (hFE) matched to within 10% of each other. Electrical Characteristics: (TC = +25C unless otherwise specified) Parameter Symbol Test Conditions Min Typ Max Unit 140 − − V VCE = 140V, VBE(off) = 1.5V − − 100 A VCE = 140V, VBE(off) = 1.5V, TC = +150C − − 2 mA ICEO VCE = 140V, IB = 0 − − 250 A IEBO VEB = 5V, IC = 0 − − 100 A OFF Characteristics Collector−Emitter Sustaining Voltage Collector Cutoff Current Emitter Cutoff Current VCEO(sus) IC = 200mA, IB = 0, Note 2 ICEX Note 2. Pulse Test: Pulse Width = 300s, Duty Cycle = 2%. Electrical Characteristics (Cont’d): (TC = +25C unless otherwise specified) Parameter Symbol Test Conditions Min Typ Max Unit VCE = 50V, t = 1s (non−repetitive) 5 − − A VCE = 100V, t = 1s (non−repetitive) 1 − − A VCE = 2V, IC = 5A 25 − 150 Second Breakdown IS/b Second Breakdown Collector Current with Base Forward Bias ON Characteristics DC Current Gain hFE Collector−Emitter Saturation Voltage VCE(sat) IC = 5A, IB = 500mA − − 1 V Base−Emitter On Voltage VBE(on) VCE = 2V, IC = 5A − − 2 V VCE = 10V, IC = 500mA, ftest = 0.5MHz 2 − − MHz VCB = 10V, IE = 0, ftest = 1MHz − − 1000 pF Dynamic Characteristics Current Gain−Bandwidth Product fT Output Capacitance Cob .135 (3.45) Max .350 (8.89) .875 (22.2) Dia Max Seating Plane .312 (7.93) Min Emitter .040 (1.02) 1.187 (30.16) .665 (16.9) .215 (5.45) .156 (3.96) Dia (2 Holes) .430 (10.92) .188 (4.8) R Max Base .525 (13.35) R Max Collector/Case