NTE631

NTE631 Silicon Rectifier Diode High−Speed Switch (Surface Mount) Description: The NTE631 is a high−speed switching diode fabricated in planar technology and encapsulated in a very small rectangular ceramic SMD package. Features: D Small Ceramic SMD Package D High Switching Speed Applications: D High−Speed Switching in Surface Mounted Circuits Absolute Maximum Ratings: Repetitive Peak Reverse Voltage, VRRM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 85V Continuous Reverse Voltage, VR . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 75V Continuous Forward Current (Note 1), IF . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 250mA Repetiive Peak Forward Current, IFRM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5020mA Non−Repetitive Peak Forward Current (Square Wave, TJ = +25°C Prior to Surge), IFSM t = 1µs . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4A t = 1ms . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1A t = 1sec . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.5A Total Power Dissipation (TA = +25°C, Note 1), Ptot . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 400mW Operating Junction Temperature, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +150°C Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −65° to +150°C Thermal Resistance, Junction−to−Ambient (Note 1), RthJA . . . . . . . . . . . . . . . . . . . . . . . . . . . 315K/W Thermal Resistance, Junction−to−Case, RthJC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 200K/W Note 1. Device mounted on an FR4 printed−circuit board. Electrical Characteristics: (TJ = +25°C, unless otherwise specified) Parameter Forward Voltage Symbol VF IF = 1mA IF = 10mA IF = 50mA IF = 150mA Test Conditions Min − − − − Typ − − − − Max 715 855 1.0 1.25 Unit mV mV V V Electrical Characteristics (Cont’d): (TJ = +25°C, unless otherwise specified) Parameter Reverse Current Symbol IR VR = 25V TJ = +150°C VR = 75V TJ = +150°C Diode Capacitance Reverse Recovery Time Forward Recovery Voltage Cd trr Vfr f = 1MHz, VR = 0 When switched from IF = 10mA to IR = 10mA, RL = 100Ω, measured at IR = 1mA When switched from IF = 10mA, tr = 20ns Test Conditions Min − − − − − − − Typ − − − − − − − Max 30 30 1 50 1.5 4 1.75 Unit nA µA µA µA pF ns V .078 (2.0) .049 (1.25) Cathode Identifier K ÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎ A .062 (1.6) Max