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NTE632

NTE632

  • 厂商:

    NTE

  • 封装:

    TO-236-3

  • 描述:

    D-DUAL HI-SPEED SMT 4NS

  • 数据手册
  • 价格&库存
NTE632 数据手册
NTE632 Silicon Rectifier Diode Dual Switching Series Pair (Surface Mount) Features: D Small Ceramic SMD Package D High Switching Speed D High Conductance D SOT−23 Molded Plastic Case Applications: D General Purpose Switching Applications Absolute Maximum Ratings: (TA = +25°C, unless otherwise specified) Non−Repetitive Peak Reverse Voltage, VRM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100V Peak Repetitive Reverse Voltage, VRRM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 75V Working Peak Reverse Voltage, VRWM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 75V DC Blocking Voltage, VR . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 75V RMS Reverse Voltage, VR(RMS) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 53V Continuous Forward Current (Note 1), IFM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 300mA Average Rectified Output Current (Note 1), IO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 150mA Non−Repetitive Peak Forward Surge Current, IFSM t = 1µs . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2A t = 1sec . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1A Power Dissipation (Note 1), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 400mW Operating Temperature Range, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −65° to +150°C Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −65° to +150°C Thermal Resistance, Junction−to−Ambient (Note 1), RthJA . . . . . . . . . . . . . . . . . . . . . . . . . . . 357K/W Note 1. Valid provided that terminals are kept at ambient temperature. Electrical Characteristics: (TA = +25°C, unless otherwise specified) Parameter Maximum Forward Voltage Symbol VF Test Conditions Min Typ Max Unit IF = 1mA − − 0.715 V IF = 10mA − − 0.855 V IF = 50mA − − 1.0 V IF = 150mA − − 1.25 V Electrical Characteristics (Cont’d): (TA = +25°C, unless otherwise specified) Parameter Symbol Maximum Reverse Current IRM Test Conditions Min Typ Max Unit − − 2.5 µA − − 50 µA VR = 25V, TJ = +150°C − − 30 µA VR = 20V − − 25 nA VR = 75V TJ = +150°C Junction Capacitance Cj VR = 0, f = 1.0MHz − − 2.0 pF Reverse Recovery Time trr IF = IR = 10mA, Irr = 0.1 x IR, RL = 100Ω − − 4 ns Schematic Diagram .016 (0.48) A/K A .098 (2.5) Max K .037 (0.95) .074 (1.9) .051 (1.3) .118 (3.0) Max .043 (1.1) .007 (0.2)
NTE632 价格&库存

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