NTE66
MOSFET
N−Ch, Enhancement Mode
High Speed Switch
Description:
The NTE66 is a TMOS Power FET in a TO220 type package designed for high voltage, high speed
power switching applications such as switching regulators, converters, solenoid and relay drivers.
Features:
D Lower RDS(ON)
D Improved Inductive Ruggedness
D Fast Switching Times
D Lower Input Capacitance
D Extended Safe Operating Area
D Improved High Temperature Reliability
D
G
S
Absolute Maximum Ratings:
Drain−Source Voltage (TJ = +255C to +1505C), VDSS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100V
Drain−Gate Voltage (RGS = 1M. , TJ = +255C to +1255C), VDGR . . . . . . . . . . . . . . . . . . . . . . . . . 100V
Gate−Source Voltage, VGS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +20V
Continuous Drain Current, ID
TC = +255C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14A
TC = +1005C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10A
Pulsed Drain Current (Note 2), IDM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 56A
Pulsed Gate Current, IGM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +1.5A
Single Pulsed Avalanche Energy (Note 3), EAS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 69mJ
Avalanche Current, IAS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14A
Total Power Dissipation (TC = +255C), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 77W
Derate Above 255C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.62W/5C
Operating Junction Temperature Range, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −555 to +1505C
Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −555 to +1505C
Lead Temperature (During Soldering, 1/8” from case, 5sec max.), TL . . . . . . . . . . . . . . . . . . . +3005C
Thermal Resistance, Junction−to−Case, R+ JC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.62K/W
Thermal Resistance, Junction−to−Ambient, R+ JA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 80K/W
Thermal Resistance, Case−to−Sink (Mounting surface flat, smooth, and greased), R+ CS . 0.5K/W
Note 1. Pulse Test: Pulse Width 3 3003s, Duty Cycle 3 2%.
Note 2. Repetitive rating: Pulse width limited by max, junction temperature.
Note 3. L = 0.53mH, Vdd = 25V, RG = 25. , Starting TJ = +255C.
Rev. 10−13
Electrical Characteristics: (TC = +255C unless otherwise specified)
Parameter
Symbol
Drain−Source Breakdown Voltage
BVDSS
Gate Threshold Voltage
VGS(th)
Test Conditions
Min
Typ
Max
Unit
VGS = 0V, ID = 2503A
100
−
−
V
VDS = VGS, ID = 2503A
2.0
−
4.0
V
Gate−Source Leakage, Forward
IGSS
VGS = 20V
−
−
100
nA
Gate−Source Leakage, Reverse
IGSS
VGS = −20V
−
−
−100
nA
Zero Gate Voltage Drain Current
IDSS
VDS = Max. Rating, VGS = 0V
−
−
250
3A
VDS = Max. Rating x 0.8, VGS = 0V,
TC = +1255C
−
−
1000
3A
VDS > ID(on) x RDS(on)max, VGS = 10V, Note 1
14
−
−
A
−
0.10
0.16
.
5.1
7.6
−
mhos
−
640
−
pF
On−State Drain−Source Current
Static Drain−Source On−State
Resistance
ID(on)
RDS(on) VGS = 10V, ID = 8.3A, Note 1
Forward Transconductance
gfs
VDS . 50V, ID = 8.3A, Note 1
Input Capacitance
Ciss
VGS = 0V, VDS = 25V, f = 1MHz
Output Capacitance
Coss
−
240
−
pF
Reverse Transfer Capacitance
Crss
−
72
−
pF
Turn−On Delay Time
td(on)
−
10
15
ns
−
34
51
ns
td(off)
−
23
35
ns
tf
−
24
36
ns
−
17
26
nC
−
3.7
5.5
nC
−
7
11
nC
Min
Typ
Max
Unit
−
−
14
A
Rise Time
tr
Turn−Off Delay Time
Fall Time
Total Gate Charge
(Gate−Source Plus Gate−Drain)
Qg
Gate−Source Charge
Qgs
Gate−Drain (“Miller”) Charge
Qgd
VDD = 0.5BVDSS, ID = 8.3A, ZO = 12.
(MOSFET switching times are essentially
independent of operating temperature)
VGS = 10V, ID = 14A, VDS = 0.8 Max. Rating
(Gate charge is essentially independent of
operating temperature)
Note 1. Pulse Test: Pulse Width 3 3003s, Duty Cycle 3 2%.
Source−Drain Diode Ratings and Characteristics:
Parameter
Symbol
Continuous Source Current (Body Diode)
IS
Test Conditions
Pulse Source Current (Body Diode)
ISM
Note 2
−
−
56
A
Diode Forward Voltage
VSD
TC = +255C, IS = 14A, VGS = 0V
−
−
2.5
V
Reverse Recovery Time
trr
TJ = +255C, IF = 14A, dIF/dt = 100A/3s
−
120
250
ns
Note 1. Pulse Test: Pulse Width 3 3003s, Duty Cycle 3 2%.
Note 2. Repetitive rating: Pulse width limited by max, junction temperature.
.420 (10.67)
Max
.110 (2.79)
.147 (3.75) Dia Max
.500
(12.7)
Max
.250 (6.35)
Max
.500
(12.7)
Min
.070 (1.78) Max
Gate
.100 (2.54)
Source
Drain/Tab
