NTE703A

NTE703A Linear Integrated Circuit RF−IF Amplifier Description: The NTE703A is an RF−IF amplifier constructed on a single silicon chip and i intended for use as a limiting or non−limiting amplifier, harmonic mixer, or oscillator to 150MHz. The low internal feedback of the device insures a higher stability−limited gain than that available from conventional circuitry. Including the biasing network in the same package reduces the number of external components required, thereby increasing the reliability and versatility of the device. Absolute Maximum Ratings: Supply Voltage, V+ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20V Output Collector Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 24V Voltage Between Input Pins . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ±5.0V Internal Power Dissipation (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 200mW Operating Temperature Range, Topr . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0° to +70°C Storage Temperature Range , Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −65° to +150°C Lead Temperature (Soldering, 60 seconds), TL . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +300°C Note 1. Rating applies for ambient temperature to +70°C. Electrical Characteristics: (TA = 25°C, V+ = 12V unless otherwise specified) Parameter Supply Current Power Consumption Quiescent Output Current Peak−to−Peak Output Current Output Saturation Voltage Forward Transadmittance Input Conductance Input Capacitance Output Capacitance Output Conductance Noise Figure ein = 0 ein = 0 ein = 0 ein = 400mVrms, f = 1kHz I7 = 2.5mA ein = 10mVrms, f = 1kHz ein < 10mVrms, f = 10.7MHz ein < 10mVrms, f = 10.7MHz eo = 100mVrms, f = 10.7MHz eo = 100mVrms, f = 10.7MHz f = 10.7MHz, RS = 500Ω f = 100MHz, RS = 500Ω Test Conditions Min − − 1.5 3.0 − 29 − − − − − − Typ 9 110 2.5 − − 33 0.35 9 2.0 0.03 6 8 Max 14 170 3.3 − 1.7 − 1.0 18 4.0 0.05 − − Unit mA mW mA mA V mmho mmho pF pF mmho dB Pin Connection Diagram (Top View) Input Low N.C. 5 6 4 GND/Case Out 7 3 Input High V (+) 8 1 Decoupling 2 N.C. .370 (9.39) Dia Max .335 (8.52) Dia Max .177 (4.5) Max .492 (12.5) Min .018 (0.45) Dia Typ 2 1 45° 8 7 3 4 5 6 .200 (5.06) Dia .032 (0.82)