NTE76

NTE76 Silicon NPN Transistor Broadband CATV Amplifier Description: The NTE76 is an NPN transistor in a TO117 type case designed to be utilized in broadband linear amplifier circuitry such as CATV trunk, bridger, and line extender amplifiers. Features: D High Gain−Bandwidth Product: fT = 1.5GHz D Low Intermodulation, Low Cross−Modulation Distortion: X−MOD = −50dB D Low Noise Figure: NF = 2.7dB D High Power Gain: GVE = 10dB Absolute Maximum Ratings: (TC = +25°C) Collector−Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50V Collector−Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30V Emitter−Base Voltage, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5V Maximum Collector Current, IC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 400mA Total Device Dissipation (TA = +25°C), Ptot . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5W Junction Temperature, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +200°C Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −65° to +150°C Thermal Resistance, Junction to Case, RΘJC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +35°C/W Electrical Characteristics: (TC = +25°C unless otherwise specified) Parameter OFF Characteristics Collector−Emitter Breakdown Voltage Collector−Base Breakdown Voltage Emitter−Base Breakdown Voltage Collector Cutoff Current V(BR)CEO IC = 5mA, IB = 0, Note 1 V(BR)CBO IC = 0.1mA, IE = 0 V(BR)EBO IE = 0.1mA, IC = 0 ICEO VCE =, 20V, IB = 0 30 50 5 − − − − − − − − 0.1 V V V mA Symbol Test Conditions Min Typ Max Unit Note 1. Pulsed through 25mH Inductor. Electrical Characteristics (Cont’d): (TC = +25°C unless otherwise specified) Parameter ON Characteristics DC Current Gain Dynamic Characteristics Collector Output Capacitance Collector Input Capacitance Functional Test Noise Figure Narrow Band Broad Band Power Gain at Optimum Noise Figure Cross−Modulation Second Order Distortion NFNB NFBB GVE VCE = 10V, IC = 10mA, f = 200MHz VCE = 22V, IC = 70mA, f = 216MHz VCE = 22V, IC = 70mA, f = 260MHz − − 10 − − 2.7 7.5 11 −53 −55 − 9.0 − −50 −50 dB dB dB dB dB Cob Cib VCB = 30V, IE = 0, f = 1MHz VEB = 0.5V, IC = 0, f = 1MHz − − 2.6 8.0 4.0 10 pF pF hFE VCE = 20V, IC = 70mA 30 − 300 Symbol Test Conditions Min Typ Max Unit X−MOD VCE = 22V, IC = 70mA, PO = +50dBmV, Note 2 2nd O VCE = 22V, IC = 70mA, PO = +50dBmV, Note 3 Note 2. 12 Channel Flat −− NCTA Channel 2 through 12 100% Mod (Square wave) Channel 13CW Note 3. Channel 2 and Channel G Intermod Product on Channel 13 Collector 45° .500 (12.7) Min Emitter .034 (0.88) Max Emitter Base .210 (5.33) Max .290 (7.36) Dia Max .017 (0.45) Max .460 (11.68) Max .140 (3.55) Max 8−32 UNC−2A .260 (6.60) Max