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NTE85

NTE85

  • 厂商:

    NTE

  • 封装:

    TO92-3

  • 描述:

    TRANS NPN 30V 500MA TO92

  • 数据手册
  • 价格&库存
NTE85 数据手册
NTE85 Silicon NPN Transistor General Purpose Amplifier TO−92 Type Package Applications: D Medium Power Amplifiers D Class B Audio Outputs D Hi−Fi Drivers Absolute Maximum Ratings: (TA = +25C unless otherwise specified) Collector−Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30V Collector−Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50V Emitter−Base Voltage, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5V Continuous Collector Current, IC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 500mA Total Device Dissipation (TA = +25C), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 625mW Derate Above 25C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5.0mW/C Operating Junction Temperature Range, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −55 to +150C Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −55 to +150C Thermal Resistance, Junction−to−Case, RthJC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 83.3C/W Thermal Resistance, Junction−to−Ambient, RthJA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 200C/W Note 1. These ratings are limiting values above which the serviceability of any semiconductor may be impaired. Note 2. These ratings are based on a maximum junction temperature of 150C. Electrical Characteristics: (TA = +25C unless otherwise specified) Parameter Min Typ Max Unit 30 − − V Collector−Base Breakdown Voltage V(BR)CBO IC = 100A, IE = 0 50 − − V Emitter−Base Breakdown Voltage 5.0 − − V Collector−Emitter Breakdown Voltage Symbol Test Conditions V(BR)CEO IC = 10mA, IB = 0, Note 3 V(BR)EBO IE = 100A, IC = 0 Collector Cutoff Current ICBO VCB = 20V, IE = 0 − − 100 nA Emitter Cutoff Current IEBO VBE = 3V, IC = 0 − − 100 nA Note 3. Pulse Test: Pulse Width  300s, Duty Cycle  2% Rev. 12−14 Electrical Characteristics (Cont’d): (TA = +25C unless otherwise specified) Parameter DC Current Gain Symbol Test Conditions Min Typ Max hFE VCE = 2V, IC = 50mA, Note 3 100 − 300 Unit Base−Emitter ON Voltage VBE(on) IC = 100mA, VCE = 2V, Note 3 0.5 − 1.0 V Collector−Emitter Saturation Voltage VCE(sat) IC = 100mA, IB = 5mA, Note 3 − − 0.6 V Current Gain−Bandwidth Product fT 100 − − MHz − − 12 pF Collector−Base Capacitance Ccb IC = 50mA, VCE = 2V VCB = 10V, IE = 0, f = 1MHz Note 3. Pulse Test: Pulse Width  300s, Duty Cycle  2% .135 (3.45) Min .210 (5.33) Max Seating Plane .500 (12.7) Min .021 (.445) Dia Max E C B .100 (2.54) .050 (1.27) .165 (4.2) Max .105 (2.67) Max .105 (2.67) Max .205 (5.2) Max
NTE85 价格&库存

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